The Surface Science Lab Heteroepitaxy Group's research effort is focused on the heteroepitaxial growth and characterization of thin film and nanoscale structures on Group IV compounds, including Si, Si1-xGex, and SiC. Commonly used in modern IC device technology, these materials are of interest due to their unique electronic and structural properties. In most cases, lattice mismatch phenomena between dissimilar materials are exploited to generate the formation of these nanoscale structures. An array of characterization tools are used to quantify results, including STM, AFM, AES, XRD, EXAFS, Raman Spectroscopy, and PEEM. Current research projects include the formation of ErSi2 and DySi2 nanowires on Si (100), Quantum Dot formation on SiC 6H, the growth of thermodynamically stable Ti(Si1-yGey)2 films on strained Si1-xGex, and the coalescence and shape transitioning effects of TiSi2 islands on Si(111). Our group is focused on these projects with the future goal of fabricating capacitively-coupled quantum dot structures and quantum dot-nanowire arrays on Group IV substrates.
Current Research Projects