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Year
|
Num |
Title
|
Author
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Journal
|
Page |
| 2006 |
0 |
The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter |
Joshua Smith, Robert Nemanich, Griff Bilbro |
Diamond and Related Materials |
870 |
|
|
[PDF]
[ABSTRACT]
|
| 2006 |
0 |
Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion devices |
Joshua Smith, Robert Nemanich, Griff Bilbro |
ICNDST/ADC |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2006 |
0 |
The effect of negative electron affinity materials on space charge mitigation of vacuum thermionic energy conversion devices |
Joshua Smith, Robert Nemanich, Griff Bilbro |
European Diamond Conference |
0 |
|
|
[PDF]
|
| 2006 |
0 |
Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy |
M.C. Zeman, C.C. Fulton, W.-C. Yang, G. Lucovsky, and R.J. Nemanich |
J. Appl. Phys. 99 |
23519 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Direct studies of domain switching dynamics in thin film ferroelectric capacitors |
A. Gruverman, B. J. Rodriguez, C. Dehoff, J. D. Waldrep, A. I. Kingon, R. J. Nemanich, and J. S. Cross |
Appl. Phys. Lett. 87, 082902 (2005) |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Oxidation Potentials of Human Eumelanosomes and Pheomelanosomes |
Alexander Samokhvalov, Lian Hong, Yan Liu, Jacob Garguilo, Robert J. Nemanich, Glenn S. Edwards and John D. Simon |
Photochemistry and Photobiology |
145 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy |
B. J. Rodriguez, R. J. Nemanich, A. Kingon, A. Gruverman, S. V. Kalinin, K. Terabe, X. Y. Liu, and K. Kitamura |
Appl. Phys. Lett. 86, 012906 (2005) |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures |
B. J. Rodriguez, W.-C. Yang, R. J. Nemanich, and A. Gruverman |
Appl. Phys. Lett. 86, 112115 (2005) |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Investigation of the mechanism of polarization switching in ferroelectric capacitors by three-dimensional piezoresponse force microscopy |
B.J. Rodriguez, A. Gruverman, A.I. Kingon, R.J. Nemanich and J.S. Cross |
Applied Physics A: Materials Science & Processing 80, 99-103 (2005) |
99 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors |
C. Dehoff, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, A. Gruverman, and J. S. Cross |
Rev. Sci. Instrum. 76, 023708 (2005) |
23708 |
|
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[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Thermionic and Field Electron Emission from Nanostructured Carbon Materials for Energy Conversion and Vacuum Electronics |
Franz A.M. Koeck, Yunyu Yang, Robert J. Nemanich |
Proceedings of IECON05 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Applications of Free-Electron Lasers in the Biological and Material Sciences |
G. S. Edwards, S. J. Allen, R. F. Haglund, R. J. Nemanich, B. Redlich, J. D. Simon and W.-C. Yang |
Photochemistry and Photobiology, 81 |
711 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays |
Garguilo JM, Koeck FAM, Nemanich RJ, Xiao XC, Carlisle JA, Auciello O |
PHYSICAL REVIEW B |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Simultaneous Elastic and Electromechanical Imaging by Scanning Probe Microscopy: Theory and Applications to Ferroelectric and Biological Materials |
J. Shin, B.J. Rodriguez, A.P. Baddorf, T. Thundat, E. Karapetian, M. Kachanov, A. Gruverman, S.V. Kalinin |
J. Vac. Sci. Technol. B 23, 2102 (2005) |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2005 |
0 |
A Model for the Effect of Schottky Barrier Lowering and Non-Planar Emitter Geometry on the Performance of a Thermionic Energy Converter |
Joshua Smith, Robert Nemanich, Griff Bilbro |
European Diamond Conference |
0 |
|
|
[PDF]
|
| 2005 |
0 |
AlN bulk crystals grown on SiC seeds |
R. Dalmau, R. Schlesser, B.J. Rodriguez, R.J. Nemanich and Z. Sitar |
Journal of Crystal Growth Volume 281, Issue 1 , 15 July 2005, Pages 68-74 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Nanoelectromechanics of polarization switching in piezoresponse force microscopy |
S. V. Kalinin, A. Gruverman, B. J. Rodriguez, J. Shin, A. P. Baddorf, E. Karapetian, and M. Kachanov |
J. Appl. Phys. 97, 074305 (2005) |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Electromechanical imaging of biological systems with sub-10 nm resolution |
S. V. Kalinin, B. J. Rodriguez, S. Jesse, T. Thundat, and A. Gruverman |
Appl. Phys. Lett. 87, 053901 (2005) |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Photo electron emission microscopy of polarity-patterned materials |
W-C Yang, B J Rodriguez, AGruverman and R J Nemanich |
J. Phys.: Condens. Matter 17 (2005) S1415–S1426 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001) |
W. J. Mecouch, B. P. Wagner, Z. J. Reitmeier, R. F. Davis, C. Pandarinath, B. J. Rodriguez, and R. J. Nemanich |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 23 (1): 72-77 JAN-FEB 2005 |
72 |
|
|
[PDF]
[ABSTRACT]
|
| 2005 |
0 |
Initial Stages of Growth of Gallium Nitride via Iodine Vapor Phase Epitaxy |
W.J. Mecouch , B.J. Rodriguez , Z.J. Reitmeier, J-S. Park, R.F. Davis, and Z. Sitar |
Mater. Res. Soc. Symp. Proc. 831, E3.23.1, 2005. |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Photoionization Threshold of Eumelanosomes Determined Using UV Free Electron Laser-Photoelectron Emission Microscopy |
Alexander Samokhvalov, Jacob Garguilo, W.-C. Yang, Glenn S. Edwards, Robert J. Nemanich, and John D. Simon |
J. Phys. Chem. B 108 |
16334 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces |
B. J. Coppa, C. C. Fulton, P. J. Hartlieb, R. F. Davis, B. J. Rodriguez, B. J. Shields, R. J. Nemanich |
J. Appl. Phys 95(10) |
5856 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy |
B. J. Rodriguez, A. Gruverman, A. I. Kingon, R. J. Nemanich, and J. S. Cross |
J. Appl. Phys. |
1958 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100) |
C. C. Fulton, G. Lucovsky, and R. J. Nemanich |
Appl. Phys. Lett. 84(4) |
580 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Interface instabilities and electronic properties of ZrO2 on silicon (100) |
C. C. Fulton, T. E. Cook, Jr., G. Lucovsky, and R. J. Nemanich |
J. Appl. Phys. 96(5) |
2665 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers |
C. L. Hinkle, C. Fulton, R. J. Nemanich and G. Lucovsky |
Applied Surface Science (234) |
240 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers |
C.L. Hinkle,C. Fulton, R.J. Nemanich, G Lucovsky |
Surface Science |
1185 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Direct correlation of surface morphology with electron emission sites for intrinsic nanocrystalline diamond films |
F.A.M. Kock, J.M. Garguilo, R.J. Nemanich |
Diamond and Related Materials 13 |
1022 |
|
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[PDF]
|
| 2004 |
0 |
On the thermionic emission from nitrogen-doped diamond films with respect to energy conversion |
F.A.M. Koeck, J.M. Garguilo, R.J. Nemanich |
Diamond & Related Materials 13 |
2052 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices |
Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G |
MICROELECTRONIC ENGINEERING (72) |
257 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Fibrinogen adsorption onto microwave plasma chemical vapor deposited diamond films |
J.M. Garguilo, B.A. Davis, M. Buddie, F.A.M. Kock, R.J. Nemanich |
Diamond and Related Materials |
595 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Modeling Thermionic Energy Conversion
|
Joshua Smith, Robert Nemanich, Griff Bilbro |
ONR TEC MURI December Meeting |
0 |
|
|
[PDF]
|
| 2004 |
0 |
X-ray absorption spectra for transition metal high- dielectrics: Final state differences for intra- and inter-atomic transitions |
Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H |
JVST B (22) |
2132 |
|
|
[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides |
Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H, Scholm DG, Freeouf JL |
PHYSICA STATUS SOLIDI B (241) 10 |
2221 |
|
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[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Raman spectroscopy of diamond and doped diamond |
Steven Prawer and Robert J. Nemanich |
Phil. Trans. R. Soc. Lond. A 362 |
2537 |
|
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[PDF]
|
| 2004 |
0 |
Polarization-dependent electron affinity of LiNbO3 surfaces |
W.-C. Yang, B. J. Rodriguez, A. Gruverman, and R. J. Nemanich |
Appl. Phys. Lett. 85, 2316 (2004) |
2316 |
|
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[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Role of thin Fe catalyst in the synthesis of double- and single-wall carbon nanotubes via microwave chemical vapor deposition |
Y. Y. Wang, S. Gupta, and R. J. Nemanich |
Applied Physics Letters 85 |
2601 |
|
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[PDF]
[ABSTRACT]
|
| 2004 |
0 |
Increased field emission site density from re-grown carbon nanotube films |
Y. Y. Wang, S. Gupta, M. L. Liang R. J. Nemanich |
Journal of Applied Physics |
0 |
|
|
[PDF]
|
| 2004 |
0 |
Experimental studies of the formation process and morphologies of carbon nanotubes with bamboo mode structures |
Y.Y. Wang, G.Y. Tang, F.A.M. Koeck, Billyde Brown, J.M. Garguilo, R.J. Nemanich |
Diamond and Related Materials 13 |
1287 |
|
|
[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors |
A. Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, J. S. Cross, and M. Tsukada |
Applied Physics Letters |
3071 |
|
|
[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Mechanical Stress Effect On Imprint Behavior Of Integrated Ferroelectric Capacitors |
A. Gruverman, B.J. Rodriguez, A.I. Kingon, R.J. Nemanich, A.K. Tagantsev, J.S. Cross, M. Tsukada |
Applied Physics Letters |
728 |
|
|
[PDF]
|
| 2003 |
0 |
Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000-1) |
B. J. Coppa, R. F. Davis, and R. J. Nemanich |
Appl. Phys. Lett. 82 |
400 |
|
|
[PDF]
|
| 2003 |
0 |
Spatial Distribution of Electron Emission Sites for Sulfur Doped |
F.A.M. Kck, J.M. Garguilo, R.J. Nemanich, S. Gupta, B. R. Weiner, and G. Morell |
Diamond and Related Materials, 12, (2003) |
474 |
|
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[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices |
Gerald Lucovsky, Gilbert B. Rayner, Jr. , Yu Zhang, Charles C. Fulton, Robert J. Nemanich, Guenther Appel, Harald Ade and Jerry L. Whitten |
Applied Surface Science, 212 |
563 |
|
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[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Characterization of hydrogen etched 6H--SiC(0001) substrates and subsequently grown AlN films |
J. D. Hartman, A. M. Roskowski, Z. J. Reitmeier, K. M. Tracy, R. F. Davis, and R. J. Nemanich |
J. Vac. Sci. Technol. A 21 |
394 |
|
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[PDF]
|
| 2003 |
0 |
High-pressure phase transformation of silicon nitride |
John Patten, Ronnie Fesperman, Satya Kumar, Sam McSpadden, Jun Qu, Michael Lance, Jennifer Huening, Robert Nemanich |
Appl. Phys. Lett. 83 (23) |
4740 |
|
|
[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001) |
K. M. Tracy, W. J. Mecouch, R. F. Davis, and R.J. Nemanich |
Journal of Applied Physics, 94 (5) |
3163 |
|
|
[PDF]
[ABSTRACT]
|
| 2003 |
377 |
Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties |
Koji Kobashi, Takeshi Tachibana, Yoshihiro Yokota, Nobuyuki Kawakami, Kazushi Hayashi , Kazuhiro Yamamoto, Yoshinori Koga, and Shuzo Fujiwara , Yasuhito Gotoh, Hironori Nakahara, Hiroshi Tsuji, and Junzo Ishikawa , Franz A. Koeck and Robert J. Nemanich |
J. Mater. Res. 18 |
305 |
|
|
[PDF]
[ABSTRACT]
|
| 2003 |
0 |
R&D of diamond films in the Frontier Carbon Technology Project and related topics |
Koji Kobashi, Yoshiki Nishibayashi, Yoshihiro Yokota, Yutaka Ando, Takeshi Tachibana, Nobuyuki Kawakami, Kazushi Hayashi, Kenichi Inoue, Kiichi Meguro, Hiroshi Imai, Hiroshi Furuta, Takashi Hirao, Kenjiro Oura, Yasuhito Gotoh, Hironori Nakahara, Hiroshi T |
DIAM RELAT MATER 12, 3-7, March-July 2003 |
233 |
|
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[PDF]
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| 2003 |
0 |
Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001) |
Lena Fitting, M. C. Zeman, W.-C. Yang, and R. J. Nemanich |
J. Appl. Phys. 93 |
4180 |
|
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[PDF]
|
| 2003 |
0 |
Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures |
M. Park, J. J. Cuomo, B. J. Rodriguez, W.-C. Yang, R. J. Nemanich, and O. Ambacher |
J. Appl. Phys. 93 |
9542 |
|
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[PDF]
|
| 2003 |
0 |
Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation |
Minseo Park, V. Sakhrani, J.-P. Maria, J. J. Cuomo, C. W. Teng, J. F. Muth, M. E. Ware, B. J. Rodriguez, and R. J. Nemanich |
J. Mater. Res. 18 |
768 |
|
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[PDF]
|
| 2003 |
0 |
Analysis of a non-orthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates |
Morgan E. Ware, Robert J. Nemanich, Jennifer L. Gray, and Robert Hull |
Journal of Applied Physics 95 (2003) |
115 |
|
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[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Response to Comment on `` `Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' '' [J. Appl. Phys. 91, 732 (2002)] |
P. J. Hartlieb, A. Roskowski, R. F. Davis, W. Platow, and R. J. Nemanich |
J. Appl. Phys. 93 |
3679 |
|
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[PDF]
|
| 2003 |
0 |
Band offset measurements of the Si3N4/GaN (0001) interface |
T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky and R. J. Nemanich |
Journal of Applied Physics, 94(6) |
3949 |
|
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[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Band offset measurements of the GaN (0001)/HfO2 interface |
T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, and R. J. Nemanich |
J. Appl. Phys. 94(11) |
7155 |
|
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[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Measurements of the Band Offset of SiO2 on Clean n- and p-type GaN |
T.E. Cook, Jr., E.H. Hurt, C.C. Fulton, W.J. Mecouch, K.M. Tracy, R.F. Davis, G. Lucovsky, and R.J. Nemanich |
Journal of Applied Physics, 93 |
3995 |
|
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[PDF]
[ABSTRACT]
|
| 2003 |
0 |
Photo-Electron Emission Microscopy (PEEM) observation of inversion domain boundaries of GaN-based lateral polarity heterostructures |
W.-C. Yang, B.J. Rodriguez, M. Park, R.J. Nemanich, V. Cimalla, O. Ambacher |
J. Appl. Phys. 94, 5720 (2003) |
0 |
|
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[PDF]
[ABSTRACT]
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| 2003 |
0 |
Attractive Migration and Coalescence: A Significant Process in the Coarsening of TiSi2 Islands on the Si(111) Surface |
W.-C. Yang, M. Zeman, H. Ade, and R. J. Nemanich |
Phys. Rev. Lett. 90 |
136102 |
|
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[PDF]
[ABSTRACT]
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| 2002 |
0 |
Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films |
A. Gruverman, B. J. Rodriguez, R. J. Nemanich, and A. I. Kingon |
Journal of Applied Physics |
2734 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Measurements of the Effective Piezoelectric Constant of Nitride Thin Films and Heterostructures using Scanning Force Microscopy |
B. J. Rodriguez, D-J. Kim, A.I. Kingon and R.J. Nemanich |
Fall MRS 2001, GaN and Related Alloys, Boston, Ma, Mat. Res. Soc., Warrendale, Pa., 2002. |
1 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Piezoresponse force microscopy for piezoelectric measurements of III-Nitride materials |
B.J. Rodriguez, A. Gruverman, A.I. Kingon, R.J. Nemanich |
Journal of Crystal Growth 246, 252-258 (2002) |
252 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Electronic States at the Interface of Ti-Si Oxide on Si(100) |
C.C. Fulton, G. Lucovsky, and R.J. Nemanich |
JVST B 20(4) |
1726 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Electrical, Structural and Microstructural Characteristics of As-Deposited and Annealed Pt and Au Contacts on Chemical-Vapor-Cleaned GaN Thin Films |
E.A. Preble, K.M. Tracy, S. Kiesel, H. McLean, P.Q. Miraglia, R.J. Nemanich, R.F. Davis, M. Albrecht and David J. Smith |
J Appl. Phys., 91, 4 |
2133 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Measurements of the Band Offset of SiO2 on Clean GaN |
E.H. Hurt, T.E. Cook Jr., K.M. Tracy, R.F. Davis, G. Lucovsky, and R.J. Nemanich |
Mat. Res. Soc. Symp Proc. Vol. (693), 557, 2001 |
557 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Analysis of Ti-silicide formation with a thin Ta interlayer on Si (100) |
Hyeongtag Jeon, Heykyoung Won, Yangdo Kim, Jaeseob Lee, and R. J. Nemanich |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 40 (5) |
903 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Current--voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy |
Jaehwan Oh and R. J. Nemanich |
J. Appl. Phys. 92 |
3326 |
|
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[PDF]
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| 2002 |
0 |
Single electron tunneling of nanoscale TiSi2 islands on Si |
Jaehwan Oh, Vincent Meunier, Hoon Ham, and R. J. Nemanich |
J. Appl. Phys. 92 |
3332 |
|
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[PDF]
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| 2002 |
0 |
Enhanced low-temperature thermionic field emission from surface-treated N-doped diamond films |
Kock FAM, Garguilo JM, Brown B, Nemanich RJ |
Diamond And Related Materials, 11 (3-6) |
774 |
|
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[PDF]
|
| 2002 |
0 |
X-ray and Raman Analysis of GaN Produced by Ultrahigh-Rate Magnetron Sputter Epitaxy |
M. Park, J-P. Maria J.J. Cuomo, Y.C. Chang, J.F. Muth, R.M. Kolbas, R.J. Nemanich, E. Carlson, J. Bumgarner |
App Phys Letters |
1797 |
|
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[PDF]
[ABSTRACT]
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| 2002 |
0 |
Superhard Phase Composed of Single-wall Carbon Nanotubes |
M. Popov, M. Kyotani, R. J. Nemanich and Y. Koga |
Phys. Rev. B, Condensed Matter, 65 (3) art.no. 033408 |
33408 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Chemical, Electrical, and Structural Properties of Au/Pd Contacts on Chemical Vapor Cleaned p-type GaN Surfaces |
P. J. Hartlieb, A. Roskowski, B. J. Rodriguez, R. J. Nemanich, and R. F. Davis |
Fall MRS 2001, GaN and Related Alloys, Boston, Ma, Mat. Res. Soc., Mat. Res. Soc. Symp. Proc. Vol. 693 Warrendale, Pa., 2002. |
0 |
|
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[PDF]
[ABSTRACT]
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| 2002 |
0 |
Pd growth and subsequent Schottky barrier formation on chemnical vapor cleaned p-type GaN Surface |
P. J. Hartlieb, A. Roskowski, R. F. Davis, W. Platow and R. J. Nemanich |
J. Appl. Phys., 91, 2 |
732 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Chemical, Electrical, and Structural Properties of Ni/Au Contacts on Chemical Vapor Cleaned p-typed GaN |
P.J. Hartlieb, A. Roskowski, R.F. Davis and R.J. Nemanich |
GaN and Related Alloys, edited by J.E. Northrup, J. Neugebauer, S.F. Chichibu, D.C. Look and H. Riechert (Mater. Res. Soc. Proc. Vol. 693 |
0 |
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[PDF]
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| 2002 |
0 |
Chemical, Electrical, and Structural Properties of Ni/Au Contacts on Chemical Vapor Cleaned p-typed GaN |
P.J. Hartlieb, A. Roskowski, R.F. Davis and R.J. Nemanich |
J Appl Phy, 91, (11) |
9151 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
TiC nanoisland formation on 6H-SiC(0001)(Si) |
Platow W, Oh J, Nemanich RJ, Sayers DE, Hartman JD, Davis RF |
J Appl Phys. 91 (9) |
6081 |
|
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[PDF]
[ABSTRACT]
|
| 2002 |
0 |
Piezoresponse force microscopy for polarity imaging of GaN |
Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ, Ambacher O. |
Appl Phys Let, 80 (22) |
4166 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
CW Ar-Ion Laser Crystallization of a-Si:H Thin Films |
A. Sunda-Meya, D.Gracin, J.Dutta, B. Vlahovic, R.J. Nemanich |
Mat. Res. Soc. Symp. Proc. , Vol. 664, A6.9 |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Quantitative analysis of a-Si1-x Cx:H: H thin films by vibrational spectroscopy and nuclear methods |
D. Gracin, K. Bogdanovic, V. Borjanovic, M. Jaksic, Z. Pastuovic, J. M. Dutta, B. Vlahovic and R. J. Nemanich |
Vacuum 61, (2-4) |
303 |
|
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[PDF]
|
| 2001 |
0 |
Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL |
D. Gracin, V. Borjanovic, B. Valhovic, A. Sunda-Meya, T. M. Patterson, J. M. Dutta, S. Hauger, I. Pinayev, M. E. Ware, D. Alexson, R. J. Nemanich and B. von Roedern |
Nuclear instruments & methods in Physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. 475(1-3) |
635 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Ultraviolet Raman Study of A1(LO) and E2 Phonons in InxGa1-xN Alloys |
Dimitri Alexson, Leah Bergman, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar and R. J. Nemanich |
J. Appl. Phys. 89 (1) |
798 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Imaging electron emission from diamond films surfaces: N-doped diamond vs. nanostructured diamond |
F. A. M. Koeck, J. M. Garguilo and R. J. Nemanich |
Diamond and Related Materials, 10 |
1714 |
|
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[PDF]
|
| 2001 |
348 |
Thermionic FEEM, PEEM and I/V Measurements of Hydrogen Terminated N-Doped CVD Diamond Surfaces |
F. A. M. Koeck, J. M. Garguilo, B. Brown and R. J. Nemanich |
Proceedings of Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference, Edited by Y. Tzeng, K. Miyoshi, M. Yoshikawa, M. Murakawa, Y. Koga, K. Kobashi and G. A. J. Amaratunga |
126 |
|
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[PDF]
|
| 2001 |
349 |
Field Emission, PEEM and FEEM Measurements of Emitting Sites of MPCVD grown NanoCrystalline diamond Films |
J. M. Garguilo, F. A. M. Koeck, Billyde Brown and R. J. Nemanich |
Proceedings of Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference, Edited by Y. Tzeng, K. Miyoshi, M. Yoshikawa, M. Murakawa, Y. Koga, K. Kobashi and G. A. J. Amaratunga |
133 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Wafer Bonding of Silicon Carbide and Gallium Nitride |
Jaeseob Lee, T.E. Cook, E.N. Bryan, J.D. Hartman, R.F. Davis, and R.J. Nemanich |
Mat. Res. Soc. Symp. Proc. Vol(681E), I2.4, 2001 |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Phonons in III-V nitrides: Confined phonons and interface phonons |
M. Dutta, D. Alexson, L. Bergman, R. J. Nemanich, R. Dupuis, K. W. Kiim, S. Komirenko, and M. Stroscio |
Physica. E 11, (Low-dimensional systems and nanostructures) |
277 |
|
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[PDF]
|
| 2001 |
350 |
High-Pressure Polymerization of Single Wall Carbon Nanotubes |
M. Popov, M. Kyotani, Y. Koga and R. J. Nemanich |
Proceedings of Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference, Edited by Y. Tzeng, K. Miyoshi, M. Yoshikawa, M. Murakawa, Y. Koga, K. Kobashi and G. A. J. Amaratunga |
681 |
|
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[PDF]
|
| 2001 |
0 |
Optical Characterization of Wide Bandgap Amorphous Semiconductors (a-Si:C:H)-Effect of Hydrogen Dilution |
Minseo Park, C. W. Teng, V. Sakhrani, M. B. McLaurin, R. M. Kolbas, R. C. Sanwald, R. J. Nemanich, J. J. Hren and J. J. Cuomo |
J. Appl. Phys. 89 (2) |
1130 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Photon energy dependence of contrast in photoelectron emission microscopy of Si devices |
V. W. Ballarotto, K. Siegrist, R. J. Phaneuf, E. D. Williams, W. -C. Yang and R. J. Nemanich |
Appl. Phys. Lett. 78 (22) |
3547 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
347 |
UV-FEL Photo-Electron Emission Microscopy of the Dynamics of Nanostructures on Silicon Surfaces |
W. C. Yang, H. Ade and R. J. Nemanich |
?Laser Applications in Microelectronic and Optoelectronic Manufacturing VI,? Edited by M. C. Gower, H. Helvajian, K. Sugioka and J. J. Dubowski. (SPIE, Bellingham, WA, 2001) SPIE Vol. 4274 |
168 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
343 |
XAFS Studies of the Formation of Cobalt Silicide on (3^(1/2) by 3^(1/2) SiC(0001) |
W. Platow, D. K. Wood, J. E. Burnette, R. J. Nemanich and D. E. Sayers |
J. Synchrotron Rad. 8 |
475 |
|
|
[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Formation of Cobalt Disilicide Films on (3 by 3) 6H-SiC (0001) |
W. Platow, D. K. Wood, K. M. Tracy, J. E. Burnette, R. J. Nemanich and D. E. Sayers |
Phys. Rev. B, 63 |
115312 |
|
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[PDF]
[ABSTRACT]
|
| 2001 |
0 |
Growth of epitaxial CoSi2 on 6H-SiC (0001) Si |
W. Platow, R. J. Nemanich, D. E. Sayers, J. D. Hartman and R. F. Davis |
J. Appl. Phys., 90, 12 |
5924 |
|
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[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Measurement of Field Emission from Nitrogen-Doped Diamond Films |
A. T. Sowers, B. L. Ward, S. L. English and R. J. Nemanich |
Diamond and Related Materials 9, (9-10) |
1569 |
|
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[PDF]
|
| 2000 |
0 |
Schottky barrier height and electron affinity of titanium on AlN |
B. L. Ward, J. D.Hartman, E. H. Hurt, K. M. Tracy, R. F. Davis and R. J. Nemanich |
J. Vac. Sci. Tech. B 18 (4) |
2082 |
|
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[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Growth and Characterization of GaN single crystals |
C. M. Balkas, Z. Sitar, L. Bergman, I. K. Shmagin, J. F. Muth, R. Kolbas, R. J. Nemanich and R. F. Davis |
J. Cryst. Growth 208 |
100 |
|
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[PDF]
|
| 2000 |
337 |
Thermionic FEEM, PEEM and I/V Measurements of N-Doped CVD Diamond Surfaces |
F. A. M. Koeck, J. M. Garguilo, B. Brown and R. J. Nemanich |
Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, edited by Kevin L. Jensen, Robert J. Nemanich, Paul Holloway, Troy Trottier, William Mackie, Dorota Temple and Junji Itoh (Mat. Res. Soc. Proc. Vol 621 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
336 |
Anomalous Field Enhancement in Planar Semiconducting Cold Cathodes from Spontaneous Ordering in the Accumulation Region |
Griff L. Bilbo and Robert J. Nemanich |
Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, edited by Kevin L. Jensen, Robert J. Nemanich, Paul Holloway, Troy Trottier, William Mackie, Dorota Temple and Junji Itoh (Mater. Res. Soc. Symp. Proc. Vol. 621 |
0 |
|
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[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures |
Griff L. Bilbro and Robert J. Nemanich |
Appl. Phys. Lett. 76, (7) |
891 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Effects of a Ta interlayer on the phase transition of TiSi2 on Si (111) |
Hyeongtag Jeon, Bokhee Jung, Young Do Kim, Woochul Yang and R. J. Nemanich |
J. Appl. Phys. 88 (5) |
2467 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
338 |
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001) |
J. D. Hartman, K. Naniwae, C. Petrich, V. Ramachandran, R. M. Feenstra, R. J. Nemanich and R. F. Davis |
Materials Science Forum 338-342, Pt. 1 |
353 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Spatial Variation of Ferroelectric Properties in Pb(Zr0.3,Ti0.7)03 Thin Films Studied by Atomic Force Microscopy |
James A. Christman, Seung-Hyun Kim, Hiroshi Maiwa, Jon-Paul Maria, Angus I. Kingon, Brian Rodriguez and R. J. Nemanich |
J. Appl. Phys. 87 (11) |
8031 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Effect of Interface Manipulation for MBE Growth of AIN on 6H-SiC |
Koichi Naniwae, Jeff Hartman, Chris Petrich, Robert F. Davis and Robert J. Nemanich |
Wide-bandgap Electronic Devices, Editors: R. J. Shul, F. Ren, M. Murakami, W. Pletschen (Mater. Res. Soc. Symp. Proc. Vol. 621 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlatice |
Leah Bergman, Mitra Dutta, M. A. Stroscio, S. M. Komirenko, C. J. Eiting, D. J. H. Lambert, H. K. Kwon, R. D. Dupuis and R. J. Nemanich |
Appl. Phys Lett. 76 (15) |
1969 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Photoemission of the SiO2-SiC Hetero-Interface |
M. L. OBrien, C. Koitzsch and R. J. Nemanich |
Proc. of Int. Conf. on Silicon Dielectric Interfaces, and J. Vac. Sci. Tech. B 18, (3) |
1776 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
0 |
Photoemission of the SiO2-SiC Hetero-Interface |
M. L. OBrien, C. Koitzsch and R. J. Nemanich |
Proc. of Int. Conf. on Silicon Dielectric Interfaces, and J. Vac. Sci. Tech. B 18, (3) |
1776 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
339 |
Electron Emission from Carbon Films: Issues of Uniformity |
R. J. Nemanich, F. A. M. Koeck, and J. Garguilo |
Proc. of First International Symposium on Cold Cathodes, The Electrochemical Society, Vol. 2000 (28) Editors M. Cahay, K. L. Jensen, P. D. Mumford, J. Yater, R. A. Murphy, D. Temple and V. J. Kapoor |
193 |
|
|
[PDF]
[ABSTRACT]
|
| 2000 |
333 |
Surface Residue Islands Nucleation in Anhydrous HF/Alcohol Vapor Processing of Si Surfaces |
Richard J. Carter, John R. Hauser and Robert J. Nemanich |
J. Electrochem. Soc. 147 (9) |
3512 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
309 |
Cobalt silicide formation on 6H silicon carbide |
A. O. Porto, B. I. Boyanov, D. E. Sayers and R. J. Nemanich |
J. Synchrotron Rad. 6 |
188 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
307 |
Hydrogen Plasma Removal of Post-RIE Residue for Backend Procesing |
A. Somashekhar, H. Ying, P. B. Smith, D. B. Aldrich and R. J. Nemanich |
Journal of Electrochemical Society 146, (6) |
2318 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
0 |
Field Emission Properties of Nitrogen-Doped Diamond Films |
A. T. Sowers, B. L. Ward, S. L. English and R. J. Nemanich |
Journal of Appl. Phys, 86, (7) |
3973 |
|
|
[PDF]
|
| 1999 |
0 |
Growth of Epitaxial CoSi2 on SiGe(001) |
B. I. Boyanov, P. T. Goeller, D. E. Sayers and R. J. Nemanich |
J. Appl. Phys. 86, (2) |
1355 |
|
|
[PDF]
|
| 1999 |
321 |
Reduction of the Phase Transition Temperature of TiSi2 on Si(111) using a Ta Interlayer |
Bokhee Jung, Young Do Kim, Woochul Yang, R. J. Nemanich and Hyeongtag Jeon |
Advanced Interconnects and Contacts, editors: D. C. Edelstein, T. Kikkawa, M. C. Ozturk, K. N. Tu, and E. J. Weitzman, (Mater. Res. Soc. Symp. Proc. Vol. 564 |
59 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
308 |
The effect of germanium on the CoSiGe thin-film reaction |
Boyan I. Boyanov, Peter T. Goeller, Dale E. Sayers and Robert J. Nemanich |
J. Synchrotron Rad. 6 |
521 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
0 |
Confined phonons and phonon-mode properties of III-V nitrides with wurtzite crystal structure |
D. Alexson, Leah Bergman, Mitra Dutta, K. W. Kim, S. Komirenko, Robert J. Nemanich, B. C. Lee, Michael A. Stroscio, and SeGi Yu |
Physica B 263-264 |
510 |
|
|
[PDF]
|
| 1999 |
311 |
Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces |
D. M. Wolfe, B. J. Hinds, F. Wang, G. Lucovsky, B. L. Ward, M Xu, R. J. Nemanich and D. M. Maher |
J. Vac. Sci. Technol. A 17, (4) |
2170 |
|
|
[PDF]
|
| 1999 |
0 |
Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si(100) |
Eliane Maillard-Schaller, B.I. Boyanov, S. English and R.J. Nemanich |
J. Appl. Physics 85, (7) |
3614 |
|
|
[PDF]
|
| 1999 |
323 |
Electrical Properties of Nanoscale TiSi2 Islands on Si |
Jaehwan Oh, Hoon Ham, Peter Laloli and R. J. Nemanich |
Self-Organized Processes in Semiconductor Alloys, edited by A. Mascarenhas, D. Follstaedt, T. Suzuki and B. Joyce, (Mater. Res. Soc. Vol. 583 |
111 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
312 |
Phonon Dynamics and Lifetimes of AlN GAN Crystallites |
Leah Bergman, Dimitir Alexson, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, Cengiz Balkas and Robert F. Davis |
GaN and Related Alloys, edited by Stephen J. Pearton, Chihping Kuo, Alan F. Wright and Takeshi Uenoyama (Mat. Res. Soc. Symp Proc. Vol. 537, Spring, San Francisco, CA) and MRS Internet J NSR 4, U794-799, Suppl. 1 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
0 |
Raman Analysis of Phonon Lifetimes in AlN and GaN of Wurtzite Structure |
Leah Bergman, Dimitri Alexson, Patrick L. Murphy, Mitra Dutta, Michael A. Stroscio, Cengiz Balkas, Hyumin Shin, Robert F. Davis and Robert J. Nemanich |
Phys. Rev. B 59, (20) |
12977 |
|
|
[PDF]
|
| 1999 |
0 |
Raman Analysis of the E1 and A1 Quasi-LO and -TO Modes in Wurtzite AlN |
Leah Bergman, Mitra Dutta, Cengiz Balkas, Robert F. Davis, James A. Christman, Dimitir Alexson and R. J. Nemanich |
J. Appl. Phys 85, (7) |
3535 |
|
|
[PDF]
|
| 1999 |
322 |
Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers |
M. E. Ware and R. J. Nemanich |
Thin Films: Stresses and Mechanical Properties VIII, edited by R. Vinci, O. Kraft, N. Moody, P. Besser, and E. Shaffer, II. (Mater. Res. Soc. Symp. Proc. Vol. 594 |
163 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
0 |
Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond |
M. Park, A. T. Sowers, C. Lizzul Rinne, R. Schlesser, L. Bergman, R. J. Nemanich, Z. Sitar, J. J. Hren, J. J. Cuomo, V. V. Zhirnov and W. B. Choi |
J. Vac. Sci. Technol. B 17, (2) |
734 |
|
|
[PDF]
|
| 1999 |
0 |
Raman Analysis and Field Emission Study of Ion Beam Etched Diamond Films |
M. Park, D. R. McGregor, L. Bergman, R. J. Nemanich, J. J. Hren, J. J. Cuomo, W. B. Choi and V. V. Zhirnov |
J. Vac. Sci. Technol. B 17, (2) |
700 |
|
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[PDF]
|
| 1999 |
0 |
Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles |
M. Park, S. M. Camphausen, A. F. Myers, P. T. Barletta, V. Sakhrani, L. Bergman, R. J. Nemanich and J. J. Cuomo |
Materials Letters 41, (5) |
229 |
|
|
[PDF]
|
| 1999 |
317 |
Germanium Segregation in the Co/SiGe Si(001) thin film system |
Peter T. Goeller, Boyan I. Boyanov, Dale Sayers, Robert J. Nemanich, Alline F. Myers and Eric B. Steel |
J. Mater. Res. 14, (11) |
4372 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
326 |
The Role of Oxide Impurities in Surface Residue Nucleation Due to Anhydrous HF/Methanol Vapor Phase Cleaning |
R. J. Carter, J. R. Hauser, and R. J. Nemanich |
Sixth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, Electrochemical Society Proceedings Vol. 99-36 |
137 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
325 |
Correlation of Photo Electron Emission Microscopy and Field Emission from Nitrogen-Doped Diamond Films |
R. J. Nemanich, F. A. M. Koeck, S. L. English and A. T. Sowers |
Sixth International Symposium on Diamond Materials, Electrochemical Society Proceedings Vol. 99-32 Honolulu, Hawaii |
206 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
300 |
Electron Emission from Crystalline Diamond Surfaces |
R. J. Nemanich, P. K. Baumann, A. T. Sowers and B. L. Ward |
Advances in Science and Technology 21, Proceedings of Topical Symposium IV- Diamond Films: Synthesis, Processing and Applications, 9th Cimtec-World Forum on New Materials Symposium, Techna Srl |
217 |
|
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[PDF]
[ABSTRACT]
|
| 1999 |
0 |
Imaging Electron Emission from Diamond and III-V Nitride Surfaces with Photo-Electron Emission Microscopy |
R. J. Nemanich, S. L. English, J. D. Hartman, A. T. Sowers, B. L. Ward, H. Ade and R. F. Davis |
Applied Surface Science 146 |
287 |
|
|
[PDF]
|
| 1999 |
318 |
An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique |
S. H. Kim, D. J. Kim, K. M. Lee, M. Park, A. I. Kingon, R. J. Nemanich, J. Im and S. K. Streiffer |
J. Mater. Res. 14, (11) |
4395 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
0 |
X-ray Photoelectron Spectroscopy Analysis of GaN/(0001)/AlN and AlN/(0001) GaN Growth Mechanisms |
S. W. King, E. P. Carlson, R. J. Therrien, J. A. Christman, R. J. Nemanich and R. F. Davis |
J. Appl. Phys. 86, (10) |
5584 |
|
|
[PDF]
|
| 1999 |
320 |
Valence Band Discontinuity of the (0001) 2H-GaN / (111) 3C-SiC Interface |
S. W. King, R. F. Davis, C. Ronning and R.J. Nemanich |
J. Electronic Mater. 28 (12) |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
0 |
Valence Band Discontinuity, Surface Reconstruction, and Chemistry of (0001), (000-1), and (1-100) 2H-AlN/6H-SiC Interfaces |
S. W. King, R. F. Davis, C. Ronning, M C. Benjamin and R. J. Nemanich |
J. Appl. Physics 86, (8) |
4483 |
|
|
[PDF]
|
| 1999 |
314 |
Chemical Vapor Cleaning of 6H-SiC Surfaces |
Sean W. King, R. Scott Kern, Mark C. Benjamin, John P. Barnak, Robert J. Nemanich and Robert F. Davis |
J. Electrochemical Society 147, (9) |
3448 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
304 |
Wet Chemical Processing of (0001)Si 6H-SiC: Hydrophobic and Hydrophilic Surfaces |
Sean W. King, Robert J. Nemanich and Robert F. Davis |
Journal of the Electrochemical Society, 146, (5) |
1910 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
310 |
Dry Ex situ Cleaning Processes for (0001)Si 6H-SiC Surfaces |
Sean W. King, Robert J. Nemanich and Robert F. Davis |
J. Electrochemical Society 146, (7) |
2648 |
|
|
[PDF]
[ABSTRACT]
|
| 1999 |
324 |
Real-Time Observation of Pt-Si Liquid Micro-Droplet Migration by Photo-Electron Emission Microscopy |
W. Yang, H. Ade and R. J. Nemanich |
Materials Issues and Modeling for Device Nanofabrication, Editors L. Merhari, L. Wille, K. Gonsalves, M. Gyure, S. Matsui, and L. Whitman. (Mater. Res. Soc. Symp. Proc. Vol. 584 |
201 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
277 |
Relationship of Field Emission Characteristics on Process Gas Nitrogen Content in Nitrongen Doped Diamond Films |
A. T. Sowers, B. L. Ward and R. J. Nemanich |
Mat. Issues in Vacuum Microelectronics, editors W. Zhu, L. S. Pan, T. E. Felter and Christopher Holland (Mater. Res. Soc. Symp. Proc., Vol. 509, 1998 Spring Meeting, San Francisco, CA. |
95 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
296 |
Film thickness effects in the Co-Si1-xGex solid phase reaction |
B. I. Boyanov, P. T. Goeller, D. E. Sayers, and R. J. Nemanich |
J. Appl. Phys. 84 (8) |
4285 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
291 |
Electron Emission Characteristics of GaN Pyramid Arrays Grown via Organommetallic Vapor Phase Epitaxy |
B. L. Ward, O. -H. Nam, J. D. Hartman, S. L. English, B. L. McCarson, R. Schlesser, Z. Sitar, R. F. Davis and R. J. Nemanich |
J. Appl Phys. 84, (9) |
5238 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
279 |
Thickness Effects In The Reaction Of Cobalt With Silicon-Germanium Alloys |
Boyan I. Boyanov, Peter T. Goeller, Dale E. Sayers, and Robert J. Nemanich |
Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, editors Shyam P. Murarka, Moshe Eizenberg, David B. Fraser, Roland Madar and Raymond Tung, (Mater. Res. Soc. Symp. Proc., Vol. 514, Spring 1998, San Francisco, CA |
165 |
|
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[PDF]
|
| 1998 |
278 |
Examination of the Silicon-Silicon Carbide Interface by Ultraviolet Photoemission Spectroscopy |
C. Koitzsch, M. O?Brien, D. Johri, A. Stoltz and R. Nemanich |
Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, edited by Steven DenBaars, John Palmour, Michael Shur and Michael Spencer. (Mater. Res. Soc. Symp. Proc., Vol. 512 San Francisco, CA. |
357 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
289 |
Structural and electronic properties of boron nitride thin films containing silicon |
C. Ronning, A. D. Banks, B. L. McCarson, R. Schlesser, Z. Sitar, R. F. Davis, B. L. Ward and R. J. Nemanich |
J. Appl. Phys. 84, (9) |
5046 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
288 |
In situ studies of metal-semiconductor interactions with synchrotron radiaiton |
D. E. Sayers, P. T. Goeller, B. I. Boyanov and R. J. Nemanich |
J. Synchrotron Rad. 5 |
1050 |
|
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[PDF]
[ABSTRACT]
|
| 1998 |
280 |
Morphology of NiSi Film on Si(100): Role of the Interface Strain |
Eliane Maillard-Schaller, B. I. Boyanov, S. English and R. J. Nemanich |
Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, editors Shyam P. Murarka, Moshe Eizenberg, David B. Fraser, Roland Madar and Raymond Tung (Proceedings of the Mater. Res. Soc. Proc., Vol. 514, Spring 1998, San Fra |
185 |
|
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[PDF]
[ABSTRACT]
|
| 1998 |
294 |
A Free Electron Laser - Photoemission Electron Microscope System (FEL-PEEM) |
H. Ade, W. Yang, S. L. English, J. Hartman, R. F. Davis, R. J. Nemanich, V. N. Litvinenko, I. V. Pinayev, Y. Wu and J. M. J. Madey |
Surface Review and Letters 5, (6) |
1257 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
293 |
Piezoelectric measurements with atomic force microscopy |
J. A. Christman, R. R. Woolcott, Jr., A. I. Kingon, and R. J. Nemanich |
Appl. Phys. Lett., 73, (26) |
3851 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
273 |
Raman Analysis of AlxGa1-xN Films |
Leah Bergman, Mitra Dutta, Michael D. Bremser, Ok-Hyun Nam, William G. Perry, Dimitri Alexson, Robert F. Davis, Cengiz M. Balkas and Robert J. Nemanich |
Nitride Semiconductors, edited by F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura and S. Strite. (Mater. Res. Soc. Symp. Proc., Vol. 482, Boston, Massachusetts) |
543 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
274 |
Morphology of Silicon Oxides on Silicon Carbide |
M. L. O?Brien, S. Pejdo and R. J. Nemanich |
Semiconductor Materials and Devices, edited by S. J. Pearton, R. J. Shul, E. Wolfgang, F. Ren, and S. Tenconi. (Mater. Res. Soc. Symp. Proc., Vol. 483, Spring 1998, San Francisco, CA |
437 |
|
|
[PDF]
|
| 1998 |
271 |
Electron Emission from Metal Diamond (100), (111) and (110) Interfaces |
P. K. Baumann and R. J. Nemanich |
J. Diamond Rel. Mat. 7, (2-5) |
612 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
272 |
Electron affinity and Schottky barrier height of metal-diamond (100), (111), and (110) interfaces |
P. K. Baumann and R. J. Nemanich |
J. of Appl. Phys. 83, (4) |
2072 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
283 |
Characterization of Copper - Diamond (100), (111) and (110) Interfaces |
P. K. Baumann and R. J. Nemanich |
Phys. Rev. B58 (3) |
1643 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
286 |
Co-deposition of Cobalt Disilicide on Silicon-Germanium Thin Films |
P. T. Goeller, B. I. Boyanov, D. E. Sayers and R. J. Nemanich |
Presented at Conference on Multigrid Coatings and Thin Films, San Diego, CA, April 21-25, 1997. Thin Solid Films 320 |
206 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
282 |
Electron Emission from Diamond Films and Surfaces |
R. J. Nemanich, P. K. Baumann, A. T. Sowers and B. L. Ward |
International Union of Materials Research Societies-ICA?97, Symposium I, Super Carbon, MYU, Tokyo, edited by S. Fujiwara, M. Kamo, R. Ruoff, R. Heinmann, D. Marton and H. Hiraoka |
171 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
295 |
Characterization of Electron Emitting Surfaces of Diamond and III-V Nitrides |
R. J. Nemanich, P. K. Baumann, M. J. Benjamin, S. L. English, J. D. Hartman, A. T. Sowers and B. L. Ward |
Diamond Films and Technologies 8: (4) |
211 |
|
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[PDF]
[ABSTRACT]
|
| 1998 |
276 |
Electron Emission Properties of Diamond and III-V Nitrides |
R. J. Nemanich, P. K. Baumann, M. J. Benjamin, S. L. English, J. D. Hartman, A. T. Sowers, B. L. Ward and P. C. Yang |
Mat. Issues in Vacuum Microelectronics, edited by W. Zhu, L. S. Pan, T. E. Felter and Christopher Holland (Mater. Res. Soc. Symp. Proc., Vol. 509, 1998 Spring Meeting, San Francisco, CA |
35 |
|
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[PDF]
[ABSTRACT]
|
| 1998 |
284 |
Electron Emission Properties of Crystalline Diamond and III-Nitride Surfaces |
R. J. Nemanich,, P. K. Baumann, M. C. Benjamin, O. -H. Nam, A. T. Sowers, B. L. Ward, H. Ade and R. F. Davis |
Applied Surface Science 130-132 Proceedings of The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces |
694 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
285 |
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction |
S. W. King, C. Ronning, R. F. Davis, M. C. Benjamin and R. J. Nemanich |
J. Appl. Phys. 84, (4) |
2086 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
292 |
X-ray Photoelectron Diffraction from (3x3) and (?㳸?㳩 R30?? (0001)Si 6H-SiC Surfaces |
S. W. King, C. Ronning, R. F. Davis, R. S. Busby and R. J. Nemanich |
J. Appl. Phys. 84, (11) |
6042 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
290 |
Cleaning of AlN and GaN Surfaces |
S. W. King, J. P. Barnak, M. D. Bremser, K. M. Tracy, C. Ronning, R. F. Davis, and R. J. Nemanich |
J. Appl. Phys. 84, (9) |
5248 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
275 |
Electron Emission Properties of Si Field Emitter Arrays Coated with Nanocrystalline Diamond from Fullerene Precursors |
T. G. McCauley, T. D. Corrigan, A. R. Krauss, O. Auciello, D. Zhou, D. M. Gruen, D. Temple, R. P. H. Chang, S. English, and R. J. Nemanich |
Covalently Bonded Disordered Thin-Film Materials, edited by M. P. Siegal, W. I. Milne, J. E. Jaskie (Mater. Res. Soc. Symp. Proc., Vol 498, 1997 Fall Meeting, Boston, MA. |
227 |
|
|
[PDF]
[ABSTRACT]
|
| 1998 |
281 |
Real-Time Observation of Ti Silicide Epitaxial Islands Growth with Photoelectron Emission Microscopy |
Woochul Yang, H. Ade, and R. J. Nemanich |
Epitaxy and Applications of Si-Based Heterostructures, edited by Eugene A. Fitzgerald, Derek C. Houghton and Patricia M. Mooney. (Mater. Res. Soc. Symp. Proc. Vol. 533, 1998 Spring Meeting , San Francisco, CA |
197 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
265 |
Thin Films of Aluminum Nitride and Aluminum Gallium Nitride for Cold Cathode Applications |
A. T. Sowers, J. A. Christman, M. D. Bremser, B. L. Ward, R. F. Davis and R. J. Nemanich |
Appl. Phys. Lett. 71, (16) |
2289 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
269 |
Sublimation growth and characterization of bulk aluminum nitride single crystals |
Cengiz M. Balkas, Zlatko Sitar, Tsvetanaka Zheleva, L. Bergman, R. J. Nemanich and R. F. Davis |
J. of Crystal Growth 179 |
363 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
262 |
The Dependence of the C49-C54 TiSi2 Phase Transition Temperature on Film Thickness and Si Substrate Orientation |
Hyeongtag Jeon, Gangjoong Yoon, and R.J. Nemanich |
Thin Solid Films 299 |
178 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
264 |
Raman Analysis of the Configurational Disorder in AlxGa1-xN films |
Leah Bergman, Michael D. Bremser, William G. Perry, Robert F. Davis, Mitra Dutta and Robert J. Nemanich |
Appl. Phys. Lett. 71(15) |
2157 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
259 |
Growth of GaN and A10.2Ga0.8N on Patterened Substrates Via Organometalllic Vapor Phase Epitaxy |
Ok-Hyun Nam, Michael D. Bremser, Brandon Ward, Robert J. Nemanich and Robert F. Davis |
Jpn. J. Appl. Phys. 36 |
0 |
|
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[PDF]
|
| 1997 |
266 |
Characterization of metal-diamond interfaces: electron affinity and Schottky barrier height |
P. K Baumann, S. P. Bozeman, B. L. Ward, and R. J. Nemanich |
Diamond and Related Materials 6 |
398 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
258 |
Comparison of electron affinity and Schottky barrier height of Zirconium and copper-diamond interfaces |
P. K. Baumann and R. J. Nemanich |
J. Vac. Sci. Technol. B15 |
1236 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
287 |
Surface Cleaning, Electronic States and Electron Affinity of Diamond (100), (111) and (110) Surfaces |
P. K. Baumann and R. J. Nemanich |
Surface Science 409 |
320 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
267 |
Structure and stability of cobalt-silicon-germanium thin films |
Peter T. Goeller, Boyan I. Boyanov, Dale E. Sayers and Robert J. Nemanich |
Nuclear Instruments and Methods in Physics Research B 133 |
84 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
263 |
AFM Analysis of HF Vapor Cleaned SiO2 Surfaces |
R. J. Carter, E. J. Bergman, D. R. Lee J. Owyang, and R. J. Nemanich |
Science and Technology of Semiconductor Surface Preparation, edited by G. S. Higashi, M. Hirose, S. Raghavan, and S. Verhaverbeke (Mater. Res. Soc. Symp. Proc., Vol. 447, San Francisco, CA |
481 |
|
|
[PDF]
|
| 1997 |
270 |
Growth of III-Nitrides via Sublimation and Metalorganic Vapor Phase Epitaxy |
Robert F. Davis, B. L. Ward, Z. Sitar, T. Zheleva, L. Bergman, I. K. Shmagin, J. F. Muth, R. M. Kolbas, and R. J. Nemanich |
Kovine, Zlitine, Technologije 31, (6) |
485 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
256 |
Photoluminescence from mechanically milled Si and SiO2 powders |
T. D. Shen, L. Shmagin, C. C. Koch, R. M. Kolbas, Y. Fahmy, L. Bergman, R. J. Nemanich, M. T. McClure, Z. Sitar and M. X. Quan |
Physical Review B55 |
7615 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
260 |
The Characterization of Strain, Impurity Content, and Crush Strength of Synthetic Diamond Crystals |
T.L. McCormick, W.E. Jackson, and R.J. Nemanich |
J. Mater. Res. 12 |
253 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
268 |
Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001) |
Woochul Yang, F. J. Jedema, H. Ade, and R. J. Nemanich |
Thin Solid Films 308-309 |
627 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
257 |
Electrical and Structural Properties of Zirconium Germanosilicide Formed by a Bilayer Solid State Reaction of Zr with Strained Sii1-x) Ge(x) Alloys |
Z. Wang, D. B. Aldrich, R. J. Nemanich and D. E. Sayers |
J. Appl. Phys. 82 |
2342 |
|
|
[PDF]
[ABSTRACT]
|
| 1997 |
260 |
An Integrated Growth and Analysis System for In-situ Xas Studies of Metal-Semiconductor Interactions |
Z. Wang, P. T. Goeller, B. I. Boyanov, D.E. Sayers and R. J. Nemanich |
Journal De Physique IV |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
255 |
Phase Transformations during Microcutting Tests on Silicon |
B. V. Tanikella, A. H. Somashekhar, A. T. Sowers, R. J. Nemanich and R. O. Scattergood |
Appl. Phys. Lett. 69 |
2870 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
248 |
Growth of Bulk ALN and GaN Single Crystals by Sublimation |
C. M. Balkas Z. Sitar T. Zheleva, L. Bergman, I. K. Shmagin, J. F. Muth, R. Kolbas, R. Nemanich, and R. F. Davis |
III-V Nitrides edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar (Mater. Res. Soc. Symp. Proc. 449, Boston, MA, Fall |
41 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
243 |
Investigation of an NEA Diamond Vacuum Microtriode Array |
C. W. Hatfield, G. L. Bilbro, A. S. Morris, P. K. Baumann, B. L. Ward and R. J. Nemanich |
III-Nitride, SiC and Diamond Materials for Electronic Devices edited by D. Kurt Gaskill, Charles D. Brandt and Robert J. Nemanich (Mater. Res. Soc. Symp. Proc.423, San Fransisco, CA, Spring |
33 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
239 |
Interface Stability of Ti(SiGe)2 and SiGe Alloys: Tie Lines in the Ternary Equilibrium Diagram |
D.B. Aldrich, F.M. d'Heurle, D.E. Sayers, and R.J. Nemanich |
Physical Review B 53 |
16279 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
250 |
Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Tempatures Less than 250?C |
E. Srinivasan, S. J. Ellis R. J. Nemanich and G. N. Parsons |
(Mater. Res. Soc. Symp Proc., Vol 452, Advances in Microcrystalline and Nanocrystalline Semiconductors |
989 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
253 |
Removal of Fluorine and CFx Residue from Si (100) Surfaces by Remote RF Hydrogen Plasma |
J. P. Barnak, H. Ying, S. King and R. J. Nemanich |
Proceedings of the Third International Symposium of Ultra Clean Processing of Silicon Surfaces |
251 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
251 |
Hydrogen Evolution from Strained SixGe1-x(100)2x1:H Surfaces |
Ja-Hum Ku and R.J. Nemanich |
J. of Appl. Phys. 80 |
4715 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
254 |
Surface electronic Structure of Clean and Hydrogen Chemisorbed SixGe1-x Alloy Surfaces |
Ja-Hum Ku and R.J. Nemanich |
Physical Review B54 |
14102 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
226 |
The Schottky barrier of Co on strained and unstrained Si Ge Alloys |
Ja-Hum Ku and R.J. Nemanich |
Applied Surface Science 104/105; Presented at Fifth International Conference on the Formation of Semiconductor Interfaces, Princeton, NJ |
262 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
247 |
Nitride Based Thin Film Cold Cathode Emitters |
James A. Christman, Andrew T. Sowers, Michael D. Bremser, Brandon L. Ward, Robert F. Davis and Robert J. Nemanich |
III-V Nitrides edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar (Mater. Res. Soc. Symp. Proc. 449, Boston, MA, Fall 1996) |
1121 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
246 |
Raman Analysis of Electron-Phonon Interactioins in GaN Films |
L. Bergman, M. D. Bremser, J. A. Christman, S. W. King, R. F. Davis, and R. J. Nemanich |
III-V Nitrides edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar (Mater. Res. Soc. Symp. Proc. 449, Boston, MA, Fall 1996) |
725 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
252 |
Cleaning of GaN Surfaces |
L.L. Smith, S.W. King, R.J. Nemanich, R.F. Davis |
J. Electronic Mater. 25 |
805 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
224 |
UV Photoemission Study of Heteroepitaxial AlGaN Films Grown on 6H-SiC |
M.C. Benjamin, M.D. Bremser, T.W. Weeks, Jr., S.W. King, R.F. Davis, and R.J. Nemanich |
Applied Surface Science 104/105, Presented at Fifth international Conference on the Formation of Semiconductor Interfaces, Princeton, NJ |
455 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
249 |
Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC(0001) Multilayer Substrates Via Organometallic Vapor Phase Epitaxy |
O.H. Nam, M.D. Bremser, B.L. Ward, R.J. Nemanich, R.F. Davis |
III-V Nitrides edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar, (Mater. Res. Soc. Symp. Proc., Vol. 449, Boston, MA, Fall 1996) p. 107-112, and Jpn.Journal of Appl. Phys., Vol. 36, No. 5A |
0 |
|
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[PDF]
[ABSTRACT]
|
| 1996 |
244 |
Characterization of Zirconium-Diamond Interfaces |
P. K. Baumann, S. P. Bozeman, B. L. Ward, and R. J. Nemanich |
III-Nitride, SiC and Diamond Materials for Electronic Devices edited by D. Kurt Gaskill, Charles D. Brandt and Robert J. Nemanich (Mater. Res. Soc. Symp. Proc. 423, San Fransisco, CA, Spring |
143 |
|
|
[PDF]
|
| 1996 |
226 |
Characterization of Cobalt-Diamond (100) Interfaces: Electron Affinity and Schottky Barrier |
P.K. Baumann and R.J. Nemanich |
Applied Surface Science 104/105 Presented at Fifth International Conference on the Formation of Semiconductor Interfaces, Princeton, NJ |
267 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
231 |
(Negative) Electron Affinity of AlN and AlGaN Alloys |
R.J. Nemanich, M.C. Benjamin, S.W. King, M.D. Bremser, R.F. Davis, B. Chen, Z. Zhang, and J. Bernholc |
Gallium Nitride and Related Materials, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond. (Mater. Resl Soc. Symp. Proc. 395, Boston, MA, Fall |
777 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
240 |
Negative Electron Affinity Surfaces of Aluminum Nitride and Diamond |
R.J. Nemanich, P.K. Baumann, M.C. Benjamin, S.W. King, J. van der Weide, and R.F. Davi |
Diamond and Related Materials 5 |
790 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
241 |
Electron Emission Measurments from CVD Diamond Surfaces |
S.P. Bozeman, P.K. Baumann, B.L. Ward, M.J. Powers, J.J. Cuomo, R.J. Nemanich and D.L. Dreifus |
Diamond and Related Materials 5 |
802 |
|
|
[PDF]
[ABSTRACT]
|
| 1996 |
242 |
Ex situ and In situ Methods for Complete Non-Carbide Carbon Removal from (0001)Si 6H-SiC Surfaces |
Sean W. King, Mark C. Benjamin, Richard S. Kern, R.J. Nemanich and Robert F. Davis |
III-Nitride,, SiC and Diamond Materials for Electronic Devices edited by D. Kurt Gaskill, Charles D. Brandt and Robert J. Nemanich (Mater. Res. Soc. Symp. Proc.423, San Fransisco, CA, Spring |
563 |
|
|
[PDF]
|
| 1996 |
245 |
Surface Morphology of Nanoscale TiSi2 Epitaxial Islands on Si(001) |
Woochul Yang, F. J. Jedema, H. Ade and R. J. Nemanich |
Control of Semiconductor Surfaces and Interfaces, edited by S. M. Prokes, O. J. Glembocki, S. K. Brierley, J. M. Gibson and J. M. Woodall, (Mater. Res. Soc. Symp. Proc. 448, Boston, MA, Fall 1996) |
223 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
208 |
Characterization of a slot antenna microwave plasma source for hydrogen plasma cleaning |
D. Korzec, F. Werner, A. Brockhaus, J. Engemann, T.P. Schneider and R.J. Nemanich |
J. of Vacuum Science and Technology A13 |
2074 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
228 |
Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth |
D.A. Tucker, D-K. Seo, M.H. Whangbo, F.R. Sivazlian, B.R. Stoner, S.P. Bozeman, A.T. Sowers, R.J. Nemanich, J.T. Glass |
Surface Science 334 |
179 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
237 |
Titanium Germanosilicide Phase Formation During the Ti-Si1-xGex Solid Phase Reactions |
D.B. Aldrich, D.E. Sayers and R.J. Nemanich |
Silicide Thin Films-Fabrication, Properties, and Applicatioins, edited by Raymond T. Tung, Karen Maex, Paul W. Pellegrini and Leslie H. Allen, (Mater. Res Soc. Proc. Symp. 402, Boston, MA, Fall |
405 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
236 |
Interface Stability of Ti(Si1-yGey)2 and Si1-xGex Alloys |
D.B. Aldrich, F.M. D'Huerle, D.E. Sayers and R.J. Nemanich |
Silicide Thin Films-Fabrication, Properties, and Applicatioins, edited by Raymond T. Tung, Karen Maex, Paul W. Pellegrini and Leslie H. Allen, (Mater. Res Soc. Proc. Symp. 402, Boston, MA, Fall |
21 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
212 |
Film Thickness in the Ti-Si1-xGex Solid Phase Reaction |
D.B. Aldrich, Holly L. Heck, Y.L. Chen, D.E. Sayers, and R.J. Nemanich |
J. of Appl. Phys. 78 |
4958 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
209 |
Stability of C54 Titanium Germanosilicide on a Silicon-Germanium Alloy Substrate |
D.B. Aldrich, Y.L. Chen, D.E. Sayers, R.J. Nemanich, S.P. Ashburn and M.C. Ozturk |
J. Appl. Phys. 77 |
5107 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
213 |
Effect of Composition on Phase Formation and Morphology in Ti-Si(1-x)Ge(x) Solid Phase Reactions |
D.B. Aldrich, Y.L. Chen, D.E. Sayers, R.J. Nemanich, S.P. Ashburn and M.C. Ozturk |
J. Mater. Res. 10 |
2849 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
219 |
RIE Passivation Layer Removal by Remote H-Plasma and H2/SiH4 Plasma Processing |
Hong Ying, J.P. Barnak, Y.L. Chen, and R.J. Nemanich |
Ultra Clean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation, edited by M. Liehr, M. Heyns, M. Hirose, H. Parks. (Mater. Res. Soc. Symp. Proc., 386, San Fransisco, CA |
285 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
217 |
Removal of SiO2 from Si(100) Surface by a Remote RF H2/SiH4 Plasma Prior to Epitaxial Growth |
J.P. Barnak, H. Ying, Y.L. Chen, J. Montgomery, and R.J. Nemanich |
Ultraclean Semiconductor Procesing Technology and surface Chemical Cleaning and Passivation, edited by M. Liehr, M. Heyns, M. Hirose, and H. Parks. (Mater. Res. Soc. Symp. Proc., 386), Pittsburgh, PA |
351 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
218 |
Removal of Flourine from Si(100) Surface by a Remote RF Hydrogen Plasma |
J.P. Barnak, S. King, J. Montgomery, Ja-Hum Ku, and R.J. Nemanich |
Ultraclean Semiconductor Procesing Technology and surface Chemical Cleaning and Passivation, edited by M. Liehr, M. Heyns, M. Hirose, and H. Parks. (Mater. Res. Soc. Symp. Proc. 386, San Fransisco, CA |
357 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
220 |
Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation |
J.S. Montgomery, J.P. Barnak, C. Silvestre, J.R. Hauser, and R.J. Nemanich |
Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation, edited by M. Liehr, M. Heyns, M. Hirose, H. Parks (Mater. Res. Soc. Symp. Proc. 386, San Fransisco, CA |
279 |
|
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[PDF]
|
| 1995 |
227 |
Morphology of Si(100) Surfaces Exposed to a Remote H-Plasma |
J.S. Montgomery, T.P. Schneider, R.J. Carter, J.P. Barnak, Y.L. Chen, J.R. Hauser and R.J. Nemanich |
Appl. Phys. Lett. 67 |
2194 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
223 |
Raman and Photoluminescence Analysis of Stress State and Impurity Distribution in Diamond Thin Films |
L. Bergman and R.J. Nemanich |
J. Appl. Physics 78 |
6709 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
246 |
Raman Analysis of Electron-Phonon Interactioins in GaN Films |
L. Bergman, M. D. Bremser, J. A. Christman, S. W. King, R. F. Davis, and R. J. Nemanich |
III-V Nitrides edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar (Mater. Res. Soc. Symp. Proc. 449, Boston, MA, Fall 1996) |
725 |
|
|
|
| 1995 |
214 |
Micro-Raman Analysis of Stress State in Diamond Thin Films |
Leah Bergman, K.F. Turner, P.W. Morrison, and R.J. Nemanich |
Applications of Diamond Films and Related Materials: 3rd International Conference, 1995, Editors: A. Feldman, Y Tzeng, W.A. Yarbrough, M. Yoshikawa, and M. Murakawa, (NIST, Washington) |
453 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
222 |
Observation of a Negative Electron Affinity for Boron Nitride |
M.J. Powers, M.C. Benjamin, L.M. Porter, R.J. Nemanich, R.F. Davis, J.J. Cuomo, G.L. Doll and Stephen J. Harris |
Applied Physics Letters 67 |
3912 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
207 |
Negative Electron Affinity Effects on H Plasma Exposed Diamond (100) Surfaces |
P.K. Baumann and R.J. Nemanich |
Diamond and Related Materials 4 |
802 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
238 |
Negative Electron Affinity Effects and Schottky Barrier Height Measurements of Metals on Diamond (100), (110), and (111) Surfaces |
P.K. Baumann and R.J. Nemanich |
Diamond for Electronic Applications, edited by David L. Dreifus, Alan Collins, Trevor Humphreys, Kumar Das and Pehr E. Pehrsson, (Mater. Res Soc. Proc. Symp. 416, Boston, MA, Fall |
157 |
|
|
[PDF]
|
| 1995 |
215 |
Negative Electron Affinity Effects and Schottky Barrier Height Measurements of Cobalt on DIamond (100) Surfaces |
P.K. Baumann, and R.J. Nemanich |
Applications of Diamond Films and Related Materials: 3rd International Conference, 1995, Editors: A. Feldman, Y. Tzeng, W.A. Yarbrough, M. Yoshikawa, and M. Murakawa, (NIST, Washington) |
41 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
235 |
Epitaxial Films of Cobalt Disilicide (100) Evaporated onto Si(100) from a Mixed Source |
P.T. Goeller, Z. Wang, D.E. Sayers, J.T. Glass and R.J. Nemanich |
Silicide Thin Films-Fabrication, Properties, and Applicatioins, edited by Raymond T. Tung, Karen Maex, Paul W. Pellegrini and Leslie H. Allen, (Mater. Res Soc. Proc. Symp. 402, Boston, MA, Fall |
511 |
|
|
[PDF]
|
| 1995 |
216 |
Diamond Electron Affinity Surfaces, Structures and Devices |
R.J. Nemanich, P.K. Baumann and J. Van der Weide |
. Applications of Diamond Films and Related MAterials: 3rd International Conference, 1995, Editors: A. Feldman, Y. Tzeng, W.A. Yarbrough, M. Yoshikawa, and M. Murakawa, (NIST, Washington) |
17 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
232 |
XPS Measurement of the SiC/AlN Band-Offset at the (0001) Interface |
Sean King, M.C. Benjamin, R.J. Nemanich, R.F. Davis, and W.R.L. Lambrecht |
Gallium Nitride and Related Materials, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond. (Mater. Res. Soc. Proc. 395, Boston, MA, Fall |
375 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
233 |
Ex situ and In situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces |
Sean W. King, Laura L. Smith, J.P. Barnak, Ja-Hum Ku, Jim A. Christman, Mark C. Benjamin, R.J. Nemanich and Robert F. Davis |
Gallium Nitride and Related Materials, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond (Mater. Res. Soc. Symp. Proc. 395, Boston, MA, Fall |
739 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
206 |
The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling |
T.D. Shen, C.C. Koch, T.L. McCormick, R.J. Nemanich, J.Y. Huang and J.G. Huang, J. Mater |
Res. 10 |
139 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
211 |
Local structure studies of (Ti1-xZrx)Si2 thin films on Si(111) |
Y. Dao, A.M. Edwards, R.J. Nemanich, and D.E. Sayers |
Physica B 208 & 209 |
513 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
230 |
Phase stabilities and surface morphologies of (Ti1-xZrx)Si2 thin films on Si(100) |
Y. Dao, D.E. Sayers and R.J. Nemanich |
J. Appl. Phys. 78 |
6584 |
|
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[PDF]
[ABSTRACT]
|
| 1995 |
221 |
Morphology and Stability of (Ti0.9Zr0.1)Si2 Thin Films on Si(111) and Si(100) Formed in UHV |
Y. Dao, D.E. Sayers, and R.J. Nemanich |
Thin Solid Films 270 (Also in the Proceedings for the ICMCTF Conference in San Diego, CA |
544 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
234 |
Characterization of Zirconium Germanosiliciide formed by Solid State Reaction of Zr with Si1-xGex Alloys |
Z. Wang, D.B. Aldrich, P. Goeller, R.J. Nemanich and D.E. Sayers |
Silicide Thin Films-Fabrication, Properties, and Applications, edited by Raymond T. Tung, Karen Maex, Paul W. Pellegrini, and Leslie H. Allen. (Mater. Res. Soc. Symp. Proc. 402, Boston, MA |
387 |
|
|
[PDF]
|
| 1995 |
210 |
EXAFS and XRD studies of phase formation of Co in reactions with Si-Ge alloys |
Z. Wang, R.J. Nemanich, D.E. Sayers |
Physica B 208 & 209 |
567 |
|
|
[PDF]
[ABSTRACT]
|
| 1995 |
229 |
Silicide Formation and Stability of TiSiGe and Co/SiGe |
Zhihai Wang, D.B. Aldrich, Y.L. Chen, D.E. Sayers, and R.J. Nemanich |
Thin Solid Films 270 (Also in the proceedings for the ICMCTF Conference in San Diego, CA, April (1995) |
555 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
190 |
Structural Investigation of the Initial Interface Region Formed by Thin Zirconium Films on Silicon (111) |
A. M. Edwards, Y. Dao, K. M. Kemner, R. J. Nemanich and D. E. Sayers |
J. Appl. Phys. 76 |
4630 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
204 |
Highly Oriented Diamond Films on Si: Growth, Characterization and Devices |
B.R. Stoner, D.M. Malta, A.J. Tessmer, J. Holmes, D.L. Dreifus, R.C. Glass, A. Sowers and R.J. Nemanich |
SPIE Vol 2151 |
2 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
189 |
Morphology of TiSi2 and ZrSi2 on Silicon (100) and (111) Surfaces |
C. A. Sukow and R. J. Nemanich, J. Mater |
J. Mater. Res. 9 |
1214 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
203 |
Bond Length Relaxation in Si1-xGex Alloys |
D.B. Aldrich, R.J. Nemanich and D.E. Sayers |
Physical Review B 50 |
15026 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
194 |
Hydrogen Plasma Cleaning Prior to Low Temperature Gate Oxide Deposition in Cluster Fabricated Mosfets |
J. S. Montgomery, J. P. Barnak, A. Bayoumi, J. R. Hauser, and R. J. Nemanich |
in Cleaning Technology in Semiconductor Device Manufacturing, edited by J. Ruzyllo and R. E. Novak, ECS Proceedings Vol. PV 94-7, (Electrochemical Soc., Pennington, NJ) |
296 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
191 |
Angle-Resolved Photoemission of Diamond (111) and (100) Surfaces; Negative Electron Affinity and Band Structure Measurements |
J. van der Weide and R. J. Nemanich |
Presented at the 21st Conference on the Physics and Chemistry of Semiconductor Interfaces - Mohonk, New York, January 24-28, 1994, J. Vac. Sci. Technol. B12 |
2475 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
201 |
Influence of Interfacial Hydrogen and Oxygen on the Schottky Barrier of Nickel on (111) and (001) Diamond Surfaces |
J. Van der Weide and R.J. Nemanich |
Physical Review B49 |
13629 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
202 |
Negative Electron Affinity Effects on the Diamond (100) Surface |
J. Van der Weide, Z. Zhang, P.K. Baumann, M.G. Wensell, J. Bernholc and R.J. Nemanich |
Physical Review B50 |
5803 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
192 |
The Origin of the Broadband Luminescence and the Effect of Nitrogen Doping on the Optical Properties of Diamond Films |
L. Bergman, M. T. McClure, J. T. Glass and R. J. Nemanich |
J. Appl. Phys. 76 |
3020 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
199 |
Recombination Processes of the Broadband and 1.681 eV Optical Centers in Diamond Films |
L. Bergman, M.T. McClure, J.T. Glass and R.J. Nemanich |
Diamond SiC Wide Bandgap Semiconductors, edited by Calvin H. Carter,, Jr., Gennady Gildenblat, Shuji Nakamura and Robert J. Nemanich Mater. Res Soc. Proc. Symp. 339, San Fransisco, CA |
663 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
193 |
Observation of a Negative Electron Affinity for Heteroeptaxial AlN on α-6H)-SiC(0001) |
M. C. Benjamin, C. Wang, R. F. Davis, and R. J. Nemanich |
Appl. Phys. Lett. 64 |
3288 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
196 |
Properties of the Heteroepitaxial AlN/SiC Interface |
M. C. Benjamin, C. Wang, R. S. Kern, R. F. Davis, and R. J. Nemanich |
Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by Calvin H. Carter, Jr., Gennady Gildenblat, Shuji Nakamura and Robert J. Nemanich (Mater. Res. Soc. Symp. Proc., 339, San Francisco, CA |
81 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
188 |
Epitaxial Cu Contacts on Semiconducting Diamond |
P. K. Baumann, T. P. Humphreys, R. J. Nemanich, K. Ishibashi, N. R. Parikh, L. M. Porter and R. F. Davis |
(4th European Conference on Diamond, Diamond-like and Related Materials) Diamond and Related Materials 3 |
883 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
197 |
Comparison of Surface Cleaning Processes for Diamond C(001) |
Peter K. Baumann, T.P. Humphreys, and R.J. Nemanich |
Diamond SiC Nitride Wide Bandgap Semiconductors, edited by Mater. Res. Soc. Symp. Proc. 339, San Fransisco, CA |
69 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
187 |
In Situ Remote H-Plasma Cleaning of Patterned Si-SiO2 Surfaces |
R. J. Carter, T. P. Schneider, J. S. Montgomery and R. J. Nemanich |
J. Electrochem. Society 141 |
3136 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
198 |
Strain and Impurity Content of Synthetic Diamond Crystals |
T. L. McCormick, W. E. Jackson, and R. J. Nemanich |
Novel Forms of Carbon II, edited by C.L. Renschler, D.M. Cox, J.J. Pouch, Y. Achiba Mater. Res. Soc. Proc. Symp. 349, San Fransisco, CA |
445 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
195 |
Reduction of Surface Roughening and Subsurface Defects in H-Plasma Cleaning of Si(100) |
T. P. Schneider, J. S. Montgomery, H. Ying, J. P. Barnak, Y. L. Chen, D. M. Maher and R. J. Nemanich |
, Cleaning Technology in Semiconductor Device Manufacturing, edited by J. Ruzyllo and R. E. Novak, ECS Proceedings, Vol. PV 94-7, Pennington, NJ |
329 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
200 |
Structural and electrcal properties of (Ti0.9Zr0.1)Si2 |
Y. Dao, A.M. Edwards, H. Ying, D.E. Sayers, and R.J. Nemanich |
Appl. Phys. Lett. 65 |
2413 |
|
|
[PDF]
[ABSTRACT]
|
| 1994 |
205 |
Determination of excess phosphorous in low-temperature GaP grown by gas source molecular beam epitaxy |
Y. He, N.A. El-Marsy, J. Ramdani, S.M. Bedair, T.L. McCormick, R.J. Nemanich and E.R. Weber |
Appl. Phys. Lett. 65 |
1671 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
165 |
EXAFS Study of the Initial Interface Region Formed by Thin Zirconium Films and Titanium Films on Silcon (111) |
A. M. Edwards, Y. Dao, R. J. Nemanich and D. E. Sayers |
Jpn. J. Appl. Phys. 32, Suppl. 32-2 |
393 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
172 |
Surface and Interface Morphology of Small Islands of Titanium and Zirconium Silicides on Silicon |
B. L. Kropman, C. A. Sukow and R. J. Nemanich |
Evolution of Surface and Thin Film Microstructure, edited by Harry A. Atwater, Eric Chason, Marcia H. Grabow. (Mater. Res. Soc.Symp. Proc. 280, Boston, Massachusetts |
589 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
180 |
Heteroepitaxial Nucleation and Growth of Highly Oriented Diamond Films on Silicon Via In-Situ Carburization and Bias-Enhanced Nucleation |
Brian R. Stoner, Scott R. Sahaida, Dean M. Malta, Andy Sowers, and Robert J. Nemanich |
2nd International Conference on the Applications of Diamond Films and Related Materials, Editors: M. Murakawa, Y. Tzeng and W. A. Yarborough, Tokyo, Japan |
825 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
171 |
Investigation of Titanium Silicon and Germanium Reaction |
D. B. Aldrich, D. E. Sayers and R. J. Nemanich |
Evolution of Surface and Thin Film Microstructure, edited by Harry A. Atwater, Eric Chason, Marcia H. Grabow. (Mater. Res. Soc. Symp. Proc. 280, Boston, Massachusetts |
585 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
167 |
XAFS Study of Some Titanium Silicon and Germanium Compounds |
D. B. Aldrich, R. J. Nemanich, and D. E. Sayers |
Jpn. J. of Appl. Phys. Proceedings from 7th International Conference on X-ray Absorption Fine Structure 32, Suppl. 32-2 |
725 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
181 |
Titanium Germanosilicide: Phase Formation, Segregation, and Morphology |
D.B. Aldrich, Y.L. Chen, D.E. Sayers, and R.J. Nemanich |
Silicides, Germanides, and Their Interfaces, edited by R. W. Fathauer, S. Manti, L. J. Schowalter, K. N. Tu, Mater. Res. Soc. Symp. Proc., Vol 320 |
305 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
181 |
Titanium Germanosilicide: Phase Formation, Segregation, and Morphology |
D.B. Aldrich, Y.L. Chen, D.E. Sayers, and R.J. Nemanich |
Silicides, Germanides, and Their Interfaces, edited by R. W. Fathauer, S. Manti, L. J. Schowalter, K. N. Tu, Mater. Res. Soc. Symp. Proc., Vol 320 |
305 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
175 |
A Study of Surface and Subsurface Properties of Si(100) After Hydrogen Ion-Beam Exposure |
H. Liu, T. Schneider, Y. L. Chen , A. Buczkokwski, D. Korzec, J. Engeman, D. M. Maher and R. J. Nemanich |
Surface Chemical Cleaning and Passivation for Semiconductor Processing, edited by G. S. Higashi, E. A. Irene, T. Ohmi (Mater. Res. Soc. Symp. Proc. 315, San Francisco, CA |
231 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
183 |
Raman Scattering Study of Interface Reactions of Co/SiGe |
Hong Ying, Zhihai Wang, D. B. Aldrich, D. E. Sayers, and R. J. Nemanich |
Silicides, Germanides and Their Interfaces, edited by R. W. Fathauer, L. Schowalter, S. Manti, K. N. Tu, (Mater. Res. Soc. Proc. 320, Pittsburgh, PA |
335 |
|
|
|
| 1993 |
176 |
Phase Transition and Formation of TiSi2 Codeposited on Atomically Clean Si(111) |
Hyeongtag Jeon, Y. S. Cho, E. Y. Kang, J. W. Park, and R. J. Nemanich |
Phase Transformations in thin Films: Thermodynamics and Kinetics. edited by M. Atzmon, A. L. Greer, J. M. E. Harper, M. R. Libera, (Mater. Res. Soc. Symp. Proc 311 |
275 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
179 |
Effects of Hydrogen Plasma Cleaning Prior to Low Temperature Gate Oxide Deposition |
J S. Montgomery, R. J. Nemanich, J. Barnak, A. Bayoumi, C. Silvestre, and J. R. Hauser |
TECHCON '93, Atlanta, GA, September 28-30 (poster) |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
186 |
Homoepitaxial Diamond Layers Grown with Different Gas Mixtures in a RF Plasma Reactor |
J. B. Posthill, D. P. Malta, R. A. Rudder, G. C. Hudson, R. E. Thomas, R. J. Markunas, T. P. Humphreys and R. J. Nemanich |
3rd International Symposium on Diamond Materials, Honolulu, Hawaii, May 16-21 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
170 |
Argon and Hydrogen Plasma Interactions on Diamond (111) Surfaces; Electronic States and Structure |
J. van der Weide and R. J. Nemanich |
Appl. Phys. Lett. 62 |
1878 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
168 |
Micro-Photoluminescence and Raman Scattering Study of Defect Formation in Diamond Films |
L. Bergman, B. R. Stoner, K. F. Turner, J. T. Glass and R. J. Nemanich |
J. Appl. Phys. 73 |
3951 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
164 |
Properties of Interfaces of Diamond |
R. J. Nemanich, L. Bergman, K. F. Turner, J. van der Weide and T. P. Humphreys |
Trieste Semiconductor Symposium on Wide-Band-Gap Semiconductors, Physica B 185 |
528 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
178 |
Photophoretic Deflection of Particles in Subatmospheric Pressure Chambers |
Ravindran Periasamy, Julian Selvaraj, Robert P. Donovan and Robert J. Nemanich |
extended abstract).TECHCON '93, Atlanta, GA, September 28-30 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
185 |
Growth and Characterization of SiGe Contacts on Semiconducting Diamond Substrates |
T. P. Humphreys, P. K. Baumann, K. F. Turner, R. J. Nemanich, K. Das, R. G. Alley, D. P. Malta and J. B. Posthill |
3rd International Symposium on Diamond Materials, Honolulu, Hawaii, edited by J.P Dismuskers, K.V. Ravi: Electrochemical Soc. Proc. 93-17, 580-586, Electrochemical Soc., Pennington, NJ |
0 |
|
|
[PDF]
|
| 1993 |
174 |
Plasma Surface Interactions and Surface Properties for Remote H-Plasma Cleaning of Si(100) |
T. P. Schneider, J. Cho, Y. L. Chen, D. M. Maher and R. J. Nemanich |
Surface Chemical Cleaning and Passivation for Semiconductor Processing, edited by G. S. Higashi, E. A. Irene, T. Ohmi (Mater. Res. Soc. Symp. Proc. 315, San Francisco, CA |
197 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
184 |
Surface Hydrogen and Band Bending at Metal Diamond Interfaces |
T. Tachibana, J. T. Glass, and R. J. Nemanich |
Electrochemical Society 3rd International Symposium on Diamond Materials, Vol. 93-17, Editors J. P. Dismukes and K. V. Ravi |
979 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
173 |
Influence of Dry and Wet Cleaning on the Properties of Rapid Thermal Grown and Depostied Gate Dielectrics |
Xiaoli Xu, Richard T. Kuehn, Mehmet C.ֺt?nd Jimmie J. Wortman, Robert J. Nemanich, Gari S. Harris and Dennis M. Maher |
Journal of Electronic Materials 22 |
335 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
182 |
Local Structural Studies on TiSi2 and ZrSi2 Thin Films on Si(111) Surfaces |
Y. Dao, A. M. Edwards, D. E. Sayers and R. J. Nemanich |
. Silicides, Germanides and Their Interfaces, edited by R. W. Fathauer, L. Schowalter, S. Manti, K. N. Tu, (Mater. Res. Soc. Proc., Vol. 320, Pittsburgh, PA |
367 |
|
|
[PDF]
[ABSTRACT]
|
| 1993 |
166 |
X-Ray Absorption Study of the Local Structure of Zr Thin Films on Silicon (111) |
Y. Dao, A. M. Edwards, R. J. Nemanich and D. E. Sayers |
Jpn. J. Appl. Phys. 32, Suppl. 32-2 |
396 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
157 |
Influence of Surface Pre-Cleaning on Electrical Properties of Rapid Thermal Oxide and Rapid Thermal Chemical Vapor Deposition Oxide |
X. Xu, R. T. Kuehn, J. M. Melzak, G. A. Hames, J. J. Wortman, M. C. Ozturk, R. J. Nemanich, G. Harris and D. Maher |
Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff (Mater. Res. Soc. Symp. Proc. 259 |
81 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
161 |
Electrical Conductivity and Photoluminescence of Diamond Films Grown by Downstream Microwave Plasma CVD |
B. R. Stoner, J. T. Glass, L. Bergman, R. J. Nemanich, L. D. Zolton and J. W. Vandersande |
Journal of Electronic Materials 21 |
629 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
159 |
Comparison of the Interface and Surface Morphologies of Zirconium and Titanium Silicides on Silicon |
C. A. Sukow and R. J. Nemanich |
Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited by A. Katz, S. P. Muraka, Y. J. Nissim, J. M. E. Harper, (Mater. Res. Soc. Symp. Proc., 260 |
251 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
153 |
Morphology and Phase Stability of TiSi2 on Si |
H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi and R. J. Nemanich |
Journal of Applied Physics 71 |
4269 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
156 |
Surface Electronic States of Low Temperature H-Plasma Exposed Ge(100) |
J. Cho and R. J. Nemanich |
Physical Review B46 |
12421 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
156 |
Surface Electronic States and Stability of the H-terminated Si(100) 1x1 Surface Produced by Low temperature H-Plasma Exposure |
J. Cho and R. J. Nemanich |
Physical Review B46 |
15212 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
156 |
Surface Electronic States of Low Temperature H-Plasma Cleaned Si(100) and Ge(100) Surfaces |
J. Cho, T. P. Schneider and R. J. Nemanich |
Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff (Mater. Res. Soc. Symp. Proc. 259 |
237 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
152 |
Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicon Carbide |
L.M. Spellman, R.C. Glass, R.F. Davis, T.P. Humphreys, R.J. Nemanich, K. Das, and S. Chevacharoenkul |
Proceedings of ICACSC '91, Amorphous and Crystalline Silicon Carbide IV - Recent Developments, edited by: C.Y. Young, M.M. Rahman, and G.L. Harris, Springer Proc. in Physics, Vol. 71 |
417 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
154 |
Schottky Barrier Height and Negative Electron Affinity of Titanium on (111) Diamond |
R. J. Nemanich and J. van der Weide |
J. Vac. Sci. Technol. B 10 |
1940 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
158 |
Nucleation and Morphology of TiSi2 on Si |
R. J. Nemanich, H. Jeon, C. A. Sukow, J. W. Honeycutt and G. A. Rozgonyi |
Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited by A. Katz, S. P. Muraka, Y. J. Nissim, J. M. E. Harper, (Mater. Res. Soc. Symp. Proc., 260, San Francisco, CA |
195 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
162 |
Interface Structure of Epitaxial TiSi2 on Si(111) |
R. J. Nemanich, H. Jeon, J. W. Honeycutt, C. A. Sukow and G. A. Rozgonyi |
Proc. of the 50th Ann. Meeting of the Electron Microscopy Society of America, Electron Microscopy, (Part 2) |
1354 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
149 |
Chemical Vapor Deposition of Diamond Films from Water Vapor RF-Plasma Discharges |
R.A. Rudder, G.C. Hudson, J.B. Posthill, R.E. Thomas, D. Malta, R.J. Markunas, T.P. Humphreys, and R.J. Nemanich |
Appl. Phys. Lett. 60 |
329 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
155 |
Plasma-Surface Interaction Limits for Remote H-Plasma Cleaning of Si(100) |
T. P. Schneider, B. L. Bernhard, Y. L. Chen and R. J. Nemanich |
Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff, (Mater. Res. Soc. Symp. Proc. 259 |
213 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
169 |
Effect of surface hydrogen on metal-diamond interfaces properties |
T. Tachibana, J. T. Glass, and R. J. Nemanich |
J. Appl. Phys. 73 |
835 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
153 |
Growth and Characterization of Titanium Silicide Films on Natural Diamond C(001) Substrates |
T.P. Humphreys, J.V. LaBrasca, K.F. Turner, R.J. Nemanich, K. Das, J.B. Posthill, J.D. Hunn, and N.R. Parikh |
Japanese J. Appl. Phys. 31 |
2369 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
151 |
Effects of Boron Doping on the Surface morphology and Structural Imperfections of Diamond Films |
X.H. Wang, G.H.M. Ma, W. Zhu, J.T. Glass, L. Bergman, K.F. Turner, and R.J. Nemanich |
Diamond and Related Materials 828 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1992 |
147 |
Transmission Electron Microscopy and Vibrational Spectroscopy Studies of Undoped and Doped Si,H and Si,C:H Films |
Y.L. Chen, C. Wang, G. Lucovsky, D.M. Maher and R.J. Nemanich |
J. Vac. Sci. Technol. A 10, (4) |
874 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
142 |
Deposition of Amorphous and Microcrystalline SiC Alloy thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process |
C. Wang, G. Locovsky, and R.J. Nemanich |
Amorphous Silicon Technology, edited by A. Madan, Y. Hamakawa, M. Thompson, P.C. Taylor, P.G. LeComber, (Mater. Res. Soc. Symp. Proc., 219, Anaheim, Califonia |
751 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
145 |
Investigation of Titanium Germanide Formation by Raman Scattering and X-Ray Absorption Spectroscopy |
D.B Aldrich, C.L. Jahncke, R.J. Nemanich, and D.E. Sayers |
Heteroepitaxy of Dissimilar Materials, edited by R.F.C. Farrow, J.P. Harbison, P.S. Peercy and A. Zangwill. (Mater. Res. Soc. Symp. Proc., 221, Anaheim, CA |
343 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
130 |
Deposition of µc-Si and µc-SiC Thin Films by Remote Plasma-Enhanced Chemical Vapor Deposition |
G. Lucovsky, C. Wang, R.J. Nemanich, and M.J. Williams |
Solar Cells 30 |
419 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
127 |
IGFET Fabrication on Homoepitaxial Diamond using insitu Boron at Lithium Doping |
G.G. Fountain, S.V. Hattangady, J.B. Posthill, R.G. Alley, R.A. Rudder, G.C. Hudson, D.P. Malta, R.E. Thomas, R.J. Markumas, T.P. Humphreys, R.J. Nemanich, V. Venkatesau and K. Das |
Proceedings of the International Symposium on Diamond Materials (The Electochemical Society) Vol. 91-8 |
523 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
136 |
Thickness Dependence of Epitaxial TiSi2 on Si (111) |
H. Jeon, J.W. Honeycutt, C.A. Sukow, G.A. Rozgonyi, and R.J. Nemanich |
Evolution of the Thin FIlm and Surface Microstructure, edited by C.V. Thompson, J.Y. Tsao, D.J. Srolovitz, (Mater. Res. Soc. Symp. Proc., 202, Boston, Massachusett |
637 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
140 |
Surface Electronic States of Low Temperature H-Plasma Cleaned Si(100) |
J. Cho, T.P. Schneider, J. van der Weide, H. Jeon, and R.J. Nemanich |
Appl. Phys. Lett. 59 |
1995 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
139 |
Interface Reactions of Titanium on Single Crystal and Thin Film Diamond Analyzed by Ultraviolet Photoemission Spectroscopy |
J. van der Weide and R.J. Nemanich |
Applications of Diamond Films and Related Materials, 73 edited by Y. Tzeng, M. Yoshikawa, M. Murakawa, and A. Feldman |
359 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
126 |
Substrate Effects and the Growth of Homoepitaxial Diamond (100) Layers Using Low Pressure rf Plasma-Enhanced Chemical Vapor Deposition |
J.B. Posthill, R.E. Thomas, R.J. Markunas, R.J. Nemanich, and D. Black |
Proceedings of the 2nd International Symposium on Diamond Materials, (The Electrochemical Society), Vol. 91-8 |
247 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
129 |
Scanning Tunneling Microscopy and Spectroscopy of PN Junctions Formed by Ion Implantation |
J.V. LaBrasca, R.C. Chapman, G.E. McGuire, and R.J. Nemanich |
J. Vac. Sci. Technol. B 9 |
752 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
128 |
Observation of Lateral Growth Between Diamond Domains by Scanning Tunneling Microscopy |
K.F. Turner, B.R. Stoner, L. Bergman, J.T. Glass, and R.J. Nemanich |
Proceedings of the Second International Conference on New Diamond Science and Technology, edited by R. Meisser, J.T. Glass, J.E. Butler, and R. Roy, (MRS International Conference Proceedings Series, Washington, DC |
607 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
148 |
Observation of surface modification and nucleation during deposition of diamond on silicon by scanning tunneling microscopy |
K.F. Turner, B.R. Stoner, L. Bergman, J.T. Glass, and R.J. Nemanich |
Journal of Applied Physics 69 |
6400 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
131 |
Surface Topography and Nucleation of Chemical Vapor Deposition Diamond Films on Silicon by Scanning Tunneling Microscopy |
K.F. Turner, Y.M. LeGrice, B.R. Stoner, J.T. Glass, and R.J. Nemanich |
J. Vac. Sci. Technol. B 9 |
914 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
147 |
Heteroepitaxial Growth and Characterizaiton of Titanium Films on Alpha (6H) Silicon Carbide |
L.M. Spellman, R.C. Glass, R.F. Davis, T.P. Humphreys, H. Jeon, R.J. Nemanich, S. Chevacharoenkul, and N.R. Parikh |
Heteroepitaxy of Dissimilar Materials, edited by R.F.C. Farrow, J.P. Harbison, P.S. Peercy, A. Zangwill, (Mater. Res. Soc. Symp. Proc., 221, Anaheim, CA |
99 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
133 |
Selected-Area Homoepitaxial Growth and Overgrowth on Si Patterned Diamond Substrates |
R.A. Rudder, J.B. Posthill, G.C. Hudson, D. Malta, R.E. Thomas, R.J. Markunas, T.P. Humphreys, and R.J. Nemanich |
Proceedings of the Second International Conference on New Diamond Science and Technology, edited by R. Messier, J.T. Glass, J.E. Butler, and R. Roy, (MRS International Conference Proceedings Series, Washington, DC |
425 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
132 |
Raman Characterizaton of Diamond Film Growth |
R.J. Nemanich, L. Bergman, Y.M. LeGrice, and R.E. Shroder |
Proceedings of the Second International Conference on New Diamond Science and Technology, edited by R. Meisser, J. E. Butler, R. Roy, and J.T. Glass, (MRS International Conference Proceedings Series, Washington, DC |
741 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
138 |
Microstructures and Domain Size Effects in Diamond Films Characterized by Raman Spectroscopy |
R.J. Nemanich, L. Bergman, Y.M. LeGrice, K.F. Turner, and T.P. Humphreys |
SPIE Proceedings, Applied Spectroscopy Materials Science Conference |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
135 |
Si(100) Surface Preparation by In-Situ or In-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO2 and Epitaxial Growth of Si |
T. Yasuda, Y. Ma, S. Habermehl, S.S. Kim, G. Lucovsky, T.P. Schneider, J. Cho, and R.J. Nemanich |
Evolution of Thin Film and Surface Microstructure, edited by C.V. Thompson, J.Y. Tsao, D.J. Srolovitz, (Mater. Res. Soc. Symp. Proc., 202, Boston, Massachusetts |
395 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
141 |
Characterization of Titanium Silicide Contacts Deposited on Semiconducting Diamond Substrates |
T.P. Humphreys, H. Jeon, J.V. LaBrasca, K.F. Turner, R.J. Nemanich, K. Das, and J.B. Posthill |
. Applications of Diamond Films and Related Materials, 73 edited by Y. Tzeng, M. Yohshikawa, M. Murakawa, and A Feldman |
353 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
134 |
Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates |
T.P. Humphreys, H. Jeon, R.J. Namanich, J.B. Posthill, R.A. Rudder, D.P. Malta, G.C. Hudson, R.J. Markunas, J.D. Hunn, and N.R. Parikh |
Evolution of Thin Film and Surface Microstructure, edited by C.V. Thompson, J.Y. Tsao, and D.J. Srolovitz, (Mater. Res. Soc. Symp. Proc, 202, Boston, Massachusetts |
463 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
146 |
Titanium Silicide Contacts on Semiconducting Diamond Substrates |
T.P. Humphreys, J.V. LaBrasca, and R.J. Nemanich |
Electronics Letters 27 |
1515 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
139 |
High-Temperatue Rectifying Contacts using Heteroepitaxial Nickel Films in Semiconducting Diamond |
T.P. Humphreys, J.V. LaBrasca, R.J. Nemanich, K. Das, and J.B. Posthill |
Japanese J. Appl. Phys. 30 |
1409 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
143 |
Low Temperature Hydrogen Plasma Cleaning Processes of Si(100), Ge(100), and SixGe1-x (100) |
T.P. Schneider, D.A. Aldrich, J. Cho, and R.J. Nemanich |
Silicon Molecular Beam Epitaxy, edited by John C. Bean, Subramanian S. Iyer, Kang I. Wang, (Mater. Res. Soc. Symp. Proc. 220, Anaheim, CA |
21 |
|
|
[PDF]
[ABSTRACT]
|
| 1991 |
124 |
Electronic Structure, Surface Morphology and Epitaxy of Remote H-Plasma Cleaned Si(100) |
T.P. Schneider, J. Cho, D.A. Aldrich, Y.L. Chen, D. Maher and R.J. Nemanich |
Proceedings of the Second International Symposium on Cleaning Technology in Semiconductor Device Manufacturing of the Electrochemical Society, Eds. Jerzy Ruzyllo and Richard E. Novak, Vol. 92-12 |
123 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
100 |
Ultrafast recombinaton and trapping in amorphous Silicon |
A. Esser, K. Seibert, H. Kurz, G.N. Parsons, C. Wang, B. Davidson, G. Lucovsky, and R.J. Nemanich |
Phys. Rev. B 41 |
2879 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
110 |
Formation of Microcrystalline Silicon Films by RMS Process |
C. Wang, G.N. Parsons, E.C. Buehler, R.J. Nemanich, and G. Lucovsky |
Materials Issues in Microcrystalline Semiconductors, edited by Phillippe M. Fauchet, Kazunobu Tanaka, and Chaung Chaung Tsai, (Mater. Res. Soc. Symp. Proc., 164, Boston, Massachusetts |
21 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
115 |
µc-Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process |
C. Wang, G.N. Parsons, S.S. Kim, E.C. Buehler, R.J. Nemanich and G. Lucovsky |
Amorphous Silicon Technology, edited by P.C. Taylor, M.J. Thompson, P. G. LeComber, Y. Hamakawa and Arun Madan, (Mater. Res. Soc. Symp. Proc., 192, San Fransisco, CA |
535 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
112 |
Phase formation during reactive molybdenum-silicide formation |
C.M. Doland and R.J. Nemanich |
J. Mat. Res. 5 |
2854 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
104 |
X-Ray Absorption Studies of Titanium Silicide Formation at the Interface of Ti Deposited on Si |
D. Aldrich, Q. Islam, H. Jeon, R. Nemanich, and D.E. Sayers |
Atomic Scale Structure of Interfaces, edited by R.D. Bringans, R.M. Feenstra, J.M. Gibson. (Mater. Res. Soc. Symp. Proc., 159, Boston, Massachusetts |
167 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
101 |
Surface Morphology of TiSi2 on Si |
H. Jeon, and R.J. Nemanich |
Proceedings of the 3rd Int. Symposium on Si MBE and Thin Solid Films 184 |
357 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
113 |
Interface Morphology, Nucleation and Island Formation of TiSi2 on Si(111) |
H. Jeon, C.A. Sukow, J.W. Honeyctt, T.P. Humphreys, R.J. Nemanich, and G.A. Rozgonyi |
Advanced Metalizations in Microelectrics, edited by A. Katz, S.P. Muraka, A. Appelbaum, (Mater. Res. Soc. Symp. Proc., 181, San Fransisco, CA |
559 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
116 |
Epitaxial Growth and Stability of C49 TiSi2 on Si (111) |
H. Jeon, J.W. Honeycutt, C.A. Sukow, T.P. Humphreys, R.J. Nemanich, and G.A. Rozgonyi |
Epitaxial Heterstructures, edited by D.W. Shaw, J.C. Bean, V.G. Keramidas, P.S. Peercy, (Mater. Res. Soc. Symp. Proc., 198, San Fransisco, CA |
595 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
105 |
Surface Morphologies and Interfaces of TiSi2 Formed From UHV Deposited Ti on Si |
H. Jeon, R.J. Nemanich, J.W. Honeycutt, and G.A. Rozgonyi |
Layered Structures: Heterepitaxy, Superlattices, Strain, and Metastability, edited by B.W. Dodson, L.J. Schowalter, J.E. Cunningham, F.H. Pollak, Mater. Res. Soc. Symp. Proc., 160, Boston, MA |
307 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
102 |
Photoluminescence above the Tauc gap in a-Si:H |
I.H. Campbell, P.M. Fauchet, S.A. Lyon, and R.J. Nemanich |
Phys. Rev. B 41 |
9871 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
118 |
Assesment of SixGe1-x Epitaxial Alloys Grown on Silicon at 350 degrees Celcius |
J.B. Posthill, D.P. Malta, S.V. Hattangady, N.R. Parikh, T.P. Humphreys, R.A. Rudder, G.G. Fountain, R.J. Nemanich, and R.J. Markunas |
Proceedings of the XIIth International Congress for Electron Microscopy, Eds. L.D. Peachy and D.B. Williams |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
117 |
Heteroepitaxial CxSi1-x Metastable Alloys |
J.B. Posthill, R.A. Rudder, S.V. Hattangady, G.G. Fountain, T.P. Humphreys, R.J. Nemanich, N.R. Parikh, and R.J. Markunas |
edited by Don W. Shaw, John C. Bean, Vassilis G. Keramidas, and Paul S. Peercy, (Mater. Res. Soc. Symp. Proc., 198, San Fransisco, CA |
497 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
120 |
Electrical Properties of B Doped CVD Grown Polycrystalline Diamond Films |
K. Nishimura, K. Das, J.T. Glass, K. Kobashi and R.J. Nemanich |
The Physics and Chemistry of Carbides; Nitrides and Borides |
183 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
125 |
Acetylene Production in a Diamond-Producing Low Pressure rf-Plasma Assisted Chemical Vapor Deposition Environment |
R.A. Rudder, G.C. Hudson, J.B. Posthill, R.E. Thomas, R.J. Markunas, R.J. Nemanich, Y.M. LeGrice, and T.P. Humphreys |
Proceedings of the 2nd International Symposium on Diamond Materials, (The Electrochemical Society), Vol. 91-8 |
209 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
103 |
Analysis of the Composite Structures in Diamond Thin Films using Raman Spectroscopy |
R.E. Shroder, R.J. Nemanich, and J.T. Glass |
Phys. Rev. B 41 |
3738 |
|
|
[PDF]
|
| 1990 |
111 |
Raman Scattering from Microcrystalline Films: Considerations of Composite Structures with Different Optical Absorption Properties |
R.J. Nemanich, E.C. Buehler, Y.M. LeGrice, R.E. Shroder, G.N. Parsons, C. Wang, G. Lucovsky, and J.B. Boyce |
Materials Issues In Microcrystalline Semiconductors, (Mater. Res. Soc. Symp. Proc., 164, Boston, Massachusetts |
265 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
121 |
Titanium Silicide: Epitaxy, Morphology and Structure |
R.J. Nemanich, H. Jeon, J.W. Honeycutt, C.A. Sukow, and G.A. Rozgonyi |
MCNC Microelectronics Technical Bulletin, 2 |
6 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
113 |
Characterization of Growth Processes of Diamond Thin Films by Raman Spectroscopy |
R.J. Nemanich, R.E. Shroder, and J.T. Glass |
Nineteenth Biennial Conference on Carbon, extended abstract |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
108 |
Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates |
T.P. Humphreys, C.A. Sukow, R.J. Nemanich, J.B. Posthill, R.A. Rudder, S.V. Hattangady, and R.J. Markunas |
Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J.T. Glass, R. Messier, N. Fujimori, (Mater. Res. Soc. Symp. Proc., 162, Boston, Massachusetts |
531 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
119 |
Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial GaAs Films |
T.P. Humphreys, R.J. Nemanich, K. Das, N.R. Parikh, and J.B. Posthill |
Electronic Letters 26 |
835 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
123 |
Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100) |
T.P. Schneider, J. Cho, J. van der Weide, S.E. Wells, G. Lucovsky, R.J. Nemanich, M.J. Mantini, R.A. Rudder, and R.J. Markunas |
Chemical Perspectives of Microelectric Materials II, edited by I.V. Interrante, K.F. Jenson, L.H. Duboise, M.E. Gross, (Mater. Res. Soc. Symp. Proc., 204, Boston, Massachusetts |
333 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
122 |
Vapor deposition of diamond thin films on various substrates |
Y.H. Lee, K.J. Bachmann, J.T. Glass, Y.M. LeGrice, and R.J. Nemanich |
Appl. Phys. Lett. 57 |
1916 |
|
|
[PDF]
|
| 1990 |
109 |
Characterization of the H Environments in Diamond Films by IR Spectroscopy |
Y.M. LeGrice, E. Buehler, R.J. Nemanich, J.T. Glass, F. Jansen, M.A. Machonkin, K. Kobashi, and C.C. Tsai |
Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J.T. Glass, R. Messier, N. Fujimori, (Mater. Res. Soc. Symp. Proc., 162, Boston, Massachusetts |
267 |
|
|
[PDF]
|
| 1990 |
107 |
Infared Characterization of the Hydrogen Environments in Diamond Thin Films |
Y.M. LeGrice, E.C. Buehler, R.J. Nemanich, J.T. Glass, K. Kabashi, F. Jansen, M.A. Machonkin and C.C. Tsai |
Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J.T. Glass, R. Meisser, N. Fujimori, (Mater. Res. Soc. Symp. Proc., 162, Boston, MA |
267 |
|
|
[PDF]
[ABSTRACT]
|
| 1990 |
106 |
Domain Size Determination in Diamond Thin Films |
Y.M. LeGrice, R.J. Nemanich, J.T. Glass, Y.H. Lee, R.A. Rudder, and R.J. Markunas |
Diamond, Silicon carbide and Related Wide Bandgap Semiconductors, edited by J.T. Glass, R. Messier, N. Fujimori, (Mater. Res. Soc. Symp. Proc., 162, Boston, MA |
219 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
95 |
Ultrafast Recombination and Trapping in Amorphous Silicon |
A. Esser, K. Seibert, H. Kurz, G.N. Parsons, C. Wang, B.N. Davidson, G. Lucovsky, and R.J. Nemanich |
Proc. of the 13th International Conference on Amorphous and Liquid Semiconductors, Asheville, NC, and Journal of Non-Crystalline Solids 114 |
573 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
94 |
Free Carrier Absorption and the Transient Optical Properties of Amorphous Silicon Thin Films: A model Including Time Dependent Free Carrier, and Static and Dispersive Interband Contributions to the Complex Dielectric Constant |
B.N. Davidson, G.Locovsky, G.N. Parsons, R.J. Nemanich, A. Esser, K. Seibert, and H. Kurz |
Proc. of the 13th International Conference on Amorphous and Liquid Semiconductors, Asheville, NC, and Journal of Non-Crystalline Solids 114 |
579 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
92 |
Boron doping of Diamond thin films |
J. Mort, D. Kuhman, M. Machonkin, M. Morgan, F. Jansen, K. Okumura, Y.M. LeGrice, R.J. Nemanich |
Appl. Phys. Lett. 55 |
1121 |
|
|
[PDF]
|
| 1989 |
98 |
Microstructural Defects and their Elimination in Heteroepitaxial GaAs on Silicon-on-Sapphire and Sapphire Substrates |
J.B. Posthill, N.R. Parikh, K. Das, T.P. Humphreys, R.J. Nemanich, and R.J. Markunas |
Proc. 47th Annual Meeting of the Electron Microscopy Society of America, edited by G.W. Bailey |
588 |
|
|
[PDF]
|
| 1989 |
97 |
Assessment of GaAs Heteroepitaxial films grown on silicon-on sapphire upgraded by double solid-phase epitaxy |
J.B. Posthill, R.J. Markunas, T.P. Humphreys, R.J. Nemanich, K. Das, W.R. Parikh, P.L. Ross, and C.J. Miner |
Appl. Phys. Lett. 55 |
1756 |
|
|
[PDF]
|
| 1989 |
96 |
Luminescence Above the Tauc Gap in a-Si:H |
P.M. Fauchet, I.H. Cambell, S.A. Lyon, and R.J. Nemanich |
Proc. of the 13th International Conference on Amorphous and Liquid Semiconductors, Asheville, NC, and Journal of Non-Crystalline Solids 114 |
277 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
99 |
Low Pressure Deposition of Polycrystalline Diamond films using 1% CH4 in H2 rf Discharges |
R.A. Rudder, G.C. Hudson, M.J. Mantini, J.B. Posthill, R.C. Hendry, R.J. Markunas, Y.M. LeGrice, And R.J. Nemanich |
Technology Update on Diamond Films, extended absract - 19, edited by R.P.H. Chang, D. Nelson, And A. Hiraki, (Mater. Res. Soc. Proc. |
89 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
90 |
Interface-Enhanced Raman Scattering from Thin Films and Interfaces |
R.J. Nemanich |
Microbeam Analysis |
141 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
93 |
Raman Scattering From Microcrystalline Si Films: Considerations of Composite Structures with Different Optical Absorption Properties |
R.J. Nemanich, E.C. Buehler, Y.M. LeGrice, R.E. Shroder, G.N. Parsons, C. Wang, G. Lucovsky, and J.B. Boyce |
J. of Non-Crystalline Solids 114 |
813 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
85 |
Raman Scattering Characterization of Titanium Silicide Formation |
R.J. Nemanich, R. Fiordalice, and H. Jeon |
IEEE Journal of Quantum Electronics 25 |
997 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
89 |
Raman Scattering Characterization of Strain in GaAs Heteroepitaxial Films Grown on Sapphire and Silicon-on-Sapphire |
T.P. Humphreys, C.A. Sukow, R.J. Nemanich, A. Majeed, N.R. Parikh, K. Das, and J.B. Posthill |
Jpn. J. Appl. Physics (Part 2) 28 |
1595 |
|
|
|
| 1989 |
86 |
Heteroepitaxial Growth and Characterization of GaAs on Silicon-on Sapphire and Sapphire Substrates |
T.P. Humphreys, C.J. Miner, J.B. Posthill, K.Das, M.K. Summerville, R.J. Nemanich, C.A. Sukow, and N.R. Parikh |
Appl. Phys. Lett. 54 |
1687 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
89 |
Raman Characterization of Strain in GaAs Epitaxial Films Grown on Sapphire and Silicon-on-Sapphire Substrates |
T.P. Humphreys, K. Das, C.A. Sukow, N.R. Parikh, R.J. Nemanich, and J.B. Posthill |
Microbeam Analysis |
171 |
|
|
[PDF]
|
| 1989 |
88 |
Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates, III-V Heterostructures for Electronic/Photonic Devices |
T.P. Humphreys, K. Das, N.R. Parikh, J.B. Posthill, R.J. Nemanich, C.J. Miner, M.K. Summerville, P.L. Ross, and R.J. Markunas |
III-V Heterostructures for Electronic/Photonic Devices, edited by C.W. Tu, V.D. Mattera, A.C. Gossard. (Mater. Res. Soc. Symp. Proc., 145, San Diego, California |
297 |
|
|
[PDF]
[ABSTRACT]
|
| 1989 |
87 |
Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates |
T.P. Humphreys, N.R. Parikh, K. Das, J.B. Posthill, R.J. Nemanich, M.K. Summerville, C.A. Sukow and C.J. Miner |
Advances in Materials, Precessing and Devices in III-V Compound Semiconductors, edited by Devendra K. Sadana, Lester E. Eastman and Russell Dupuis. (Mater. Res. Soc. Symp. Proc., 144, Boston, Massachusetts |
195 |
|
|
[PDF]
[ABSTRACT]
|
| 1988 |
84 |
Raman analysis of the Composite Structures in Diamond Thin Films |
R.E. Shroder, R.J. Nemanich, and J.T. Glass |
Proc. of SPIE Diamond Optics Symposium, Proc. SPIE 969 |
79 |
|
|
[PDF]
[ABSTRACT]
|
| 1988 |
82 |
Strain in Graded Thickness GaAs/Si Heteroepitaxial Structures Grown with a Buffer Layer |
R.J. Nemanich, D.K. Biegelsen, R.A. Street, B. Downs, B.S. Krusor, and D.R. Yingling |
Heteroepitaxay on Silicon: Fundamentals, Structure, and Devices, edited by H.K. Choi, R. Hull, H. Ishiwara, R.J. Nemanich, (Mater. Res. Soc. Symp. Proc. 116, Reno, Nevada |
245 |
|
|
[PDF]
[ABSTRACT]
|
| 1988 |
81 |
Raman Scattering Characterization of Carbon Bonding in Diamond and Diamond-Like Thin Films |
R.J. Nemanich, J.T. Glass, G. Lucovsky, and R.E. Shroder |
J. Vac. Sci. Technol. A6 |
1783 |
|
|
[PDF]
[ABSTRACT]
|
| 1988 |
83 |
Precursor Structures in the Formaiton of Diamond Films |
R.J. Nemanich, R.E. Shroder, J.T. Glass, and G. Lucovsky |
Proc. 19th International Conf. on the Physics of Semiconductors, edited by W. Zawadaki |
515 |
|
|
[PDF]
[ABSTRACT]
|
| 1987 |
80 |
Defects in single-crystal silicon induced by hydrogenation |
N.M. Johnson, F.A. Ponce, R.A. Street, and R.J. Nemanich |
Physical Review B 35 |
4166 |
|
|
[PDF]
[ABSTRACT]
|
| 1987 |
78 |
Reactive Interface Formation - Pt/Si(111): Nucleation and Morphology |
R.J. Nemanich, C.M. Doland, and F.A. Ponce |
J. Vac. Sci. Tachnol. B5 |
1039 |
|
|
[PDF]
[ABSTRACT]
|
| 1987 |
79 |
The Initial Stages of Silicide Epitaxy - Nucleation and Morphology |
R.J. Nemanich, C.M. Doland, and F.A. Ponce |
Initial Stages of Epitaxial Growth, edited by Robert Hull, J. Murray Gibson, David A. Smith, (Mater. Res. Soc. Symp. Proc. 94, Anaheim, CA |
139 |
|
|
[PDF]
[ABSTRACT]
|
| 1986 |
77 |
Effect of Ion Implantation on Low-Temperature Formation of Polycrystalline Silicon From LPVD Amorphous Silicon |
A. Chiang, G.Y. Wu, F.A. Ponce and R.J. Nemanich |
Published in Proceedings of International Conference on Semiconductor and IC Technology |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1986 |
73 |
Raman Spectroscopy for Semiconductor Thin Film Analysis |
R.J. Nemanich |
Materials Characterization, edited by Nathan W. Cheung and Marc-A. Nicolet, (Mater. Res. Soc. Symp. Proc., 69, Palo Alto, CA |
23 |
|
|
[PDF]
[ABSTRACT]
|
| 1986 |
74 |
Raman Scattering for Semiconductor Interface Analysis |
R.J. Nemanich |
SPIE Conference |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1986 |
72 |
Initial Nucleation and the Effects on Epitaxial Silicide Formation |
R.J. Nemanich, C.M. Doland, R.T. Fulks, and F.A. Ponce |
Thin Films-Interfaces and Phenomena, edited by R.J. Nemanich, P.S. Ho, and S.S. Lau, (Mater. Res. Soc. Symp. Proc., 54, Boston, Massachusetts |
252 |
|
|
[PDF]
[ABSTRACT]
|
| 1986 |
76 |
Formation of Epitaxial Silicides: In situ Ellipsometric Studies |
S.M. Kelso, R.J. Nemanich, C.M. Doland and F.A. Ponce |
Published in Proceedings of 18th International Conference Phys. Semiconductors, Stockholm, Sweden |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1985 |
70 |
Thickness Dependence of the Reactions at the Interface of Pd and Si<111> |
R.J. Nemanich and C.M. Doland |
J. Vac. Sci. Tech. B3 |
1142 |
|
|
[PDF]
[ABSTRACT]
|
| 1985 |
67 |
Thin Film Kinetics and Reactions at Metal-Silicon Interfaces |
R.J. Nemanich, B.L. Stafford, J.R. Abelson and T.W. Sigmon |
Proc. 17th Int. Conf. on the Phys. of Semiconductors, edited by Chadi and Harrison |
155 |
|
|
[PDF]
[ABSTRACT]
|
| 1985 |
68 |
Initial Reactions and Silicide Formation of Titanium on Silicon Studied by Raman Spectroscopy |
R.J. Nemanich, R.T. Fulks, B.L. Stafford and H.A. Vander Plas |
J. Vac. Sci. Tech. A 3 |
938 |
|
|
[PDF]
[ABSTRACT]
|
| 1985 |
69 |
Reactions of Thin Film Titanium on Silicon Studied by Raman Spectroscopy |
R.J. Nemanich, R.T. Fulks, B.L. Stafford, H.A. Vander Plas |
Appl. Phys. Lett. 46 |
670 |
|
|
[PDF]
[ABSTRACT]
|
| 1985 |
71 |
In Situ Ellipsometric Studies of Palladium Silicide Formation |
S.M. Kelso, R.J. Nemanich and C.M. Doland |
Thin Film-Interfaces and Phenomena, edited by R.J. Nemanich, P.S. Ho, and S.S. Lau, (Mater. Res. Soc. Symp. Proc., 54, Boston, Massachusetts |
23 |
|
|
[PDF]
[ABSTRACT]
|
| 1984 |
65 |
Electron-Spin-Resonance Study of Boron Doped Amorphous Si(x)Ge(1-x):H Alloys |
M. Stutzmann, R.J. Nemanich and J. Stuke |
Phys. Rev. B 30 |
3595 |
|
|
[PDF]
[ABSTRACT]
|
| 1984 |
66 |
Summary Abstract: Two-stage process for silicide formation at metal-silicon interfaces |
R.J. Nemanich, B.L. Stafford, W.B. Jackson, M.J. Thompson, J.R. Abelson and T.W. Sigmon |
J. Vac. Sci. Technol. B 2 |
588 |
|
|
[PDF]
|
| 1984 |
64 |
Raman Scattering from Solid Silicon at the Melting Temperature |
R.J. Nemanich, D.K. Biegelsen, R.A. Street and L.E. Fennel |
Phys. Rev. B 29 |
6005 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
61 |
Summary Abstract: Metal amorphous Si interfaces: Structural and electrical properties |
C.C. Tsai, M.J. Thompson, R.J. Nemanich, W.B. Jackson, and B.L. Stafford |
J. Vac. Sci. Technology A 1 |
785 |
|
|
[PDF]
|
| 1983 |
54 |
Metal-Induced Crystallization of Hydrogenated Amorphous Si Films |
C.C. Tsai, R.J. Nemanich, M.J. Thompson and B.L. Stafford |
Physica 117B & 118B |
953 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
63 |
Solid Silicon at the Melting Temperature is Crystaline |
D.K. Biegelsen, R.J. Nemanich, L.E. Fennel and R.A. Street |
Energy Beam-Solid Interactions and Transient Thermal Processing, edited by John C.C. Fan and Noble M. Johnson, (Mater. Res. Soc. Sym. Proc. 23, Boston, Massachusetts |
383 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
57 |
Schottky Barrier Amorphous-Crystalline Interface Formation |
M.J. Thompson, R.J. Nemanich and C.C. Tsai |
Surface Sci. 132 |
250 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
58 |
Low Frequency Raman Scattering in Chalcogenide Glasses |
R.J. Nemanich |
J. Non-Cryst. Sol. 59 & 60 |
851 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
63 |
Initial Phase Formation at the Interface of Ni, Pd, or Pt on Si |
R.J. Nemanich, C.C. Tsai, B.L. Stafford, J.R. Abelson and T.W. Sigmon |
Thin Films and Interfaces Ii, edited by J.E.E. Baglin, D.R. Campbell and W.K. Chu, (Mater. Res. Soc. Sym. Proc., 25, Boston, Massachusetts |
9 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
50 |
Aligned, Coexisting Liquid and Solid Regions in Laser-Annealed Si |
R.J. Nemanich, D.K. Biegelsen and W.G. Hawkins |
Phys. Rev. B27 |
7817 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
52 |
Configurations of a Chemically Ordered Continuous Random Network to Describe the Structure of GeSe2 Gla |
R.J. Nemanich, F.L. Galeener, J.C. Mikkelsen, Jr., G.A.N. Connell, G. Etherington, A.C. Wright and R.N. Sinclair |
Physica 117B & 118B |
959 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
59 |
Interface Kinetics at Metal Contacts on a-Si:H |
R.J. Nemanich, M.J. Thompson, W.B. Jackson, C.C. Tsai and B.L. Stafford |
J. Non-Cryst. Sol. 59 & 60 |
513 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
56 |
Initial Reactions at the Interface of Pt and Amorphous Silicon |
R.J. Nemanich, W.B. Jackson, C.C. Tsai and B.L. Stafford |
J. Vac. Sci. Tech. B 1 |
519 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
53 |
Raman Scattering from Hydrogenated Amorphous Silicon |
S.A. Lyon and R.J. Nemanich |
Physica 117B & 118B |
871 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
60 |
The Absolute Luminescence Quantum Efficiency in Hydrogenated Amorphous Silicon |
W.B. Jackson and R.J. Nemanich |
J. Non-Cryst Sol. 59 & 60 |
353 |
|
|
[PDF]
[ABSTRACT]
|
| 1983 |
51 |
Optical Absorption Spectra of Surface and Interface States in Hydrogenated Amorphous Silicon |
W.B. Jackson, D.K. Biegelsen, R.J. Nemanich and J.C. Knights |
Appl. Phys. Lett. 42 |
105 |
|
|
[PDF]
|
| 1983 |
55 |
Energy Dependence of the Carrier Mobility-Lifetime Product in Hydrogenated Amorphous Silicon |
W.B. Jackson, R.J. Nemanich and N.M. Amer |
Phys. Rev B 27 |
4861 |
|
|
[PDF]
[ABSTRACT]
|
| 1982 |
48 |
Lattice Dynamics of the Layered Compounds Inl and InBr |
B.P. Clayman, R.J. Nemanich, J.C. Mikkelsen, Jr. and G. Lucovsky |
Phys. Rev. B26 |
2011 |
|
|
[PDF]
[ABSTRACT]
|
| 1982 |
47 |
Interfacial Reactions Between Au and Hydrogenated Amorphous Si |
C.C. Tsai, R.J. Nemanich and M.J. Thompson |
J. Vac. Sci. Tech. 21 |
632 |
|
|
[PDF]
[ABSTRACT]
|
| 1982 |
45 |
Surface Topography of Laser Annealed Silicon |
D. Haneman and R.J. Nemanich |
Sol. State Commun. 43 |
203 |
|
|
[PDF]
[ABSTRACT]
|
| 1982 |
44 |
Correlated Electrical and Microstructural Studies of Recrystallized Silicon Thin Films on Bulk Glass Substrates |
D.K. Biegelsen, N.M. Johnson, R.J. Nemanich, M.D. Moyer and L.E. Fennell |
Laser and Electron-Beam Interaction with Solids, edited by B.R. Appleton, G.K. Cellar, Mater. Res. Soc. Symp. Proc., 4, Boston, MA |
331 |
|
|
[PDF]
[ABSTRACT]
|
| 1982 |
43 |
Electronic Structure of CePd3 from Resonant Photoemission ad Optical Reflectivity Spectra |
J.W. Allen, R.J. Nemanich and S.-J. Oh. J |
Appl. Phys. 53 |
2145 |
|
|
[PDF]
|
| 1982 |
46 |
Strain of Laser Annealed Silicon Surfaces |
R.J. Nemanich and D. Haneman |
Appl. Phys. Lett. 40 |
785 |
|
|
[PDF]
|
| 1982 |
49 |
Aligned, Coexisting Liquid and Solid Regions in Pulsed and cw Laser Annealing of Si |
R.J. Nemanich, D.K. Biegelsen and W.G. Hawkins |
Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by J. Narayan, W.L. Brown, R.A. Lemons, (Mat. Res. Soc. Symp. Proc., 13, Boston, MA |
211 |
|
|
[PDF]
[ABSTRACT]
|
| 1982 |
41 |
Light Scattering from Magnetic Excitations in Orthoferrites |
R.M. White, R.J. Nemanich and Conyers Herring |
Phys. Rev. B 25 |
1822 |
|
|
[PDF]
[ABSTRACT]
|
| 1982 |
42 |
Microstrain in Laser-Crystallized Silicon Islands on Fused Silica |
S.A. Lyon, R.J. Nemanich, N.M. Johnson and D.K. Biegelsen |
Appl. Phys. Lett. 40 |
316 |
|
|
[PDF]
|
| 1981 |
39 |
Structural and Electrical Properties of Noble Metal-Hydrogenated Amorphous Silicon Interfaces |
C.C. Tsai, M.J. Thompson and R.J. Nemanich |
J. de Phys. 42 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1981 |
38 |
Effect of Thermal Annealing on the Structural and Electrical Properties of the Pd-a-Si:H Interface |
C.C. Tsai, R.J. Nemanich and M.J. Thompson |
Xerox, Palo Alto, CA |
1 |
|
|
[PDF]
[ABSTRACT]
|
| 1981 |
37 |
Silicide Formation in Pd-a-Si:H Schottky Barriers |
M.J. Thompson, N.M. Johnson, R.J. Nemanich and C.C. Tsai |
Appl. Phys. Lett. 39 |
274 |
|
|
[PDF]
|
| 1981 |
40 |
Phonons of the Metal/Amorphous Silicon Interface Studied by Interference Enhanced Raman Scattering |
R.J. Nemanich and C.C. Tsai |
J. de Phys. 42 |
0 |
|
|
[PDF]
[ABSTRACT]
|
| 1981 |
35 |
Structure and Growth of the Interface of Pd on a-Si:H |
R.J. Nemanich, C.C. Tsai and T.W. Sigmon |
Phys. Rev. B 23 - Rapid Communications |
6828 |
|
|
[PDF]
[ABSTRACT]
|
| 1981 |
36 |
Interference Enhanced Raman Scattering Study of the Interfacial Reaction of Pd an a-Si:H |
R.J. Nemanich, C.C. Tsai, M.J. Thompson and T.W. Sigmon |
J. Vac. Sci. Tech. 19 |
685 |
|
|
[PDF]
[ABSTRACT]
|
| 1981 |
34 |
Light Scattering Study of Boron Nitride Microcrystals |
R.J. Nemanich, S.A. Solin and R.M. Martin |
Phys. Rev. B 23 |
6348 |
|
|
[PDF]
[ABSTRACT]
|
| 1980 |
28 |
Structural Studies of Amorphous Semiconducting Thin Films using Interference Enhanced Raman Scattering |
C.C. Tsai and R.J. Nemanich |
J. Non-Cryst. Solids 35 & 36 |
1203 |
|
|
[PDF]
[ABSTRACT]
|
| 1980 |
32 |
Silicide Formation at the Interface of Pd on Amorphous and Crystalline Si |
C.C. Tsai, R.J. Nemanich and T.W. Sigmon |
Proc. of the 15th International Conference on the Physics of Semiconductors, Kyoto, Japan. J. Phys. Soc. Japan 49 |
1265 |
|
|
[PDF]
[ABSTRACT]
|
| 1980 |
26 |
Interference Enhanced Raman Scattering from very Thin Absorbing Films |
G.A.N. Connell, R.J. Nemanich and C.C. Tsai |
Appl. Phys. Lett. 36 |
31 |
|
|
[PDF]
|
| 1980 |
29 |
Structure and Defects in the Amorphous Si:As:H System |
R.J. Nemanich and J.C. Knights |
J. Non-Cryst. Solids 35 & 36 |
243 |
|
|
[PDF]
[ABSTRACT]
|
| 1980 |
27 |
Interference-enhanced Raman Scattering of very Thin Titanium and Titanium Oxide Films |
R.J. Nemanich, C.C. Tsai and G.A.N. Connell |
Phys. Rev. Lett. 44 |
273 |
|
|
[PDF]
[ABSTRACT]
|
| 1980 |
31 |
Compositional Anisotropy and Microstructure of a-Si:H |
R.J. Nemanich, D.K. Biegelsen and M.P. Rosenblum |
Proc. of the 15th International Conference on the Physics of Semiconductors, Kyoto, Japan. J Phys. Soc. Japan 49 |
1189 |
|
|
[PDF]
[ABSTRACT]
|
| 1980 |
33 |
Raman Spectroscopic Evaluation of Silicides Formed with a Scanned Electron Beam |
R.J. Nemanich, T.W. Sigmon, N.M. Johnson, M.D. Moyer and S.S. Lau |
Laser and Electron-Beam Solid Interactions and Materials Processing, edited by J.F. Gibbons, L. D.Hess and T.W. Sigmon, (Mat. Res. Soc. Sym. Proc. 1, Boston, MA, 1980) |
541 |
|
|
[PDF]
[ABSTRACT]
|
| 1980 |
30 |
Raman Scattering from Magnons in Rare Earth Orthoferrites |
R.M. White, R.J. Nemanich and C. Tsang |
J. Magnetism and Magnetic Mat. 15-18 |
773 |
|
|
[PDF]
[ABSTRACT]
|
| 1979 |
22 |
Structural Interpretation of the Vibrational Spectra of a-Si:H Alloys |
G. Lucovsky, R.J. Nemanich and J.C. Knights |
Phys. Rev. B 19 |
2064 |
|
|
[PDF]
[ABSTRACT]
|
| 1979 |
21 |
Defects in Plasma-deposited a-Si:H |
J.C. Knights, G. Lucovsky and R.J. Nemanich |
J. Non-Cryst. Solids 32 |
393 |
|
|
[PDF]
[ABSTRACT]
|
| 1979 |
23 |
First- and Second-order Raman Scattering from Finite-size Crystals of Graphite |
R.J. Nemanich and S.A. Solin |
Phys. Rev. B 20 |
392 |
|
|
[PDF]
[ABSTRACT]
|
| 1979 |
24 |
Light Scattering from Correlated Ion Fluctuations in Ionic Conductors |
R.J. Nemanich, R.M. Martin and J.C. Mikkelsen, Jr |
Solid State Commun. 32 |
79 |
|
|
[PDF]
[ABSTRACT]
|
| 1979 |
25 |
Low Frequency Light Scattering from the Cuprous Halides |
R.J. Nemanich, R.M. Martin and J.C. Mikkelsen, Jr |
Proc. of the International Conference on Fast Ion Transport in Solids, Lake Geneva, Wisconsin |
547 |
|
|
[PDF]
[ABSTRACT]
|
| 1978 |
20 |
Hydrogen Environments and Defects in Plasma-Deposited a-Si:H |
D.K. Biegelsen, G. Lucovsky, J.C. Knights and R.J. Nemanich |
Proc. of the 14th International Conference on the Physics of Semiconductors, Edinburgh Scotland, Vol. 43 |
1143 |
|
|
[PDF]
[ABSTRACT]
|
| 1978 |
16 |
Hydrogen Bonding in Silicon-Hydrogen Alloys |
J.C. Knights, G. Lucovsky and R.J. Nemanich |
Philosophical Magazine B, Vol 37 No. 4 |
467 |
|
|
[PDF]
[ABSTRACT]
|
| 1978 |
18 |
Thermally Induced Effects in Evaporated Chalcogenide Films. II. Optical Absorption |
R.A. Street, R.J. Nemanich and G.A.N. Connell |
Phys. Rev. B 18 |
6915 |
|
|
[PDF]
[ABSTRACT]
|
| 1978 |
17 |
Thermally Induced Effects in Evaporated Chalcogenide Films. I. Structure |
R.J. Nemanich |
Phys. Rev. B 18 |
6900 |
|
|
[PDF]
[ABSTRACT]
|
| 1978 |
19 |
Raman Scattering from the Copper Halides Cul, CuBr, and CuCl in the High Temperature Phases |
R.J. Nemanich and J.C. Mikkelsen |
Jr. Proc. of the 14th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, No. 43, Chapter 20 |
661 |
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[PDF]
[ABSTRACT]
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| 1978 |
15 |
Spectroscopic Evidence for Bonding Coordination Defects in Amorphous As |
R.J. Nemanich, G. Lucovsky, W. Pollard and J.D. Joannopoulos |
Solid State Commun. 26 |
137 |
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[PDF]
[ABSTRACT]
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| 1977 |
11 |
New Chemically-ordered Compositions in the Glass Systems Ge1-xSx and Ge1-xSex |
G. Lucovsky, R.J. Nemanich and F.L. Galeener |
Proc. of the 5th International Conference on Amorphous and Liquid Semiconductors, Edinburgh, Scotland |
0 |
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[PDF]
[ABSTRACT]
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| 1977 |
9 |
Low-Frequency Inelastic Light Scattering from Chalcogenide Glasses and Alloys |
R. J. Nemanich |
Phys. Rev. B 16 |
1655 |
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[PDF]
[ABSTRACT]
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| 1977 |
12 |
Observation of an Anomolously Sharp Feature in the 2nd Order Raman Spectrum of Graphite |
R.J. Nemanich and S.A. Solin |
Solid State Commun. 23 |
417 |
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[PDF]
[ABSTRACT]
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| 1977 |
5 |
Mossbauer Study of the Ferromagnetic Behavior of Chromium-rich Fe-Cr Alloys |
R.J. Nemanich, C.W. Kimball, B.D. Dunlap and A.T. Aldred |
Phys. Rev. B 16 |
124 |
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[PDF]
[ABSTRACT]
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| 1977 |
14 |
Long Wavelength Lattice Vibrations of Graphite |
R.J. Nemanich, G. Lucovsky and S.A. Solin |
Proc. of the International Conference on Lattice Dynamics, edited by M. Balkanski (Flammarion, Paris, France) |
619 |
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[PDF]
[ABSTRACT]
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| 1977 |
8 |
Infrared Active Optical Vibrations of Graphite |
R.J. Nemanich, G. Lucovsky and S.A. Solin |
Solid State Commun. 23 |
117 |
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[PDF]
[ABSTRACT]
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| 1977 |
10 |
Optical Probes of the Lattice Dynamics of Graphite |
R.J. Nemanich, G. Lucovsky and S.A. Solin |
Mat. Sci. and Eng. 31 |
157 |
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[PDF]
[ABSTRACT]
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| 1977 |
7 |
Raman-Brillouin Light Scattering Determination of the Structural Correlation Range in GeSe2 Glass |
R.J. Nemanich, M. Gorman and S.A. Solin |
Solid State Commun. 21 |
277 |
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[PDF]
[ABSTRACT]
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| 1977 |
13 |
Raman Scattering from Intercalated Donor Compounds of Graphite |
R.J. Nemanich, S.A. Solin and D. Guerard |
Phys. Rev. B 16 |
2965 |
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[PDF]
[ABSTRACT]
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| 1977 |
6 |
First Evidence for Vibrational Excitations of Large Atomic Clusters in Amorphous Semiconductors |
R.J. Nemanich, S.A. Solin and G. Lucovsky |
Solid State Commun. 21 |
273 |
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[PDF]
[ABSTRACT]
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| 1976 |
4 |
Inexpensive High-speed Dentist Drill Light Chopper and its use in Rejecting Luminescence Background from Raman Spectra |
R.J. Nemanich, S.A. Solin and J. Doehler |
Rev. Sci. Instrum 47 |
741 |
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[PDF]
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| 1975 |
1 |
Coordination Dependent Vibrational Properties of Amorphous Semiconductor Alloys |
G. Lucovsky, R.J. Nemanich, S.A. Solin, and R.C. Keezer |
Solid State Commun. 17 |
1567 |
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[PDF]
[ABSTRACT]
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| 1975 |
3 |
Raman Spectra of the As2S3-GeS2 and As2Se3-GeSe2 Alloy Systems |
R.J. Nemanich and S.A. Solin and G. Lucovsky |
Proc. of the 6th International Conference on Amorphous and Liquid Semiconductors, Leningrad, Russia |
518 |
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[PDF]
[ABSTRACT]
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| 1975 |
2 |
Vibrational Modes of Amorphous (GeS2)1-x(As2S3)x and (GeSe2)1-x(As2Se3)x |
R.J. Nemanich, S.A. Solin and G. Lucovsky |
Proc. of the 4th International Conference on Light Scattering in Solids, Campinas, Brazil |
631 |
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[ABSTRACT]
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